X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

P. D. C. King; T. D. Veal; S. A. Hatfield; P. H. Jefferson; C. F. McConville; C. E. Kendrick; C. H. Swartz; S. M. Durbin

doi:10.1063/1.2783214

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

P. D. C. King
, T. D. Veal
, S. A. Hatfield
, P. H. Jefferson
, C. F. McConville
, C. E. Kendrick
, C. H. Swartz
, S. M. Durbin

Research output: Contribution to journal › Article › peer-review

Abstract

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

Original language	English
Pages (from-to)	112103
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	11
DOIs	https://doi.org/10.1063/1.2783214
Publication status	Published - 10 Sept 2007

Keywords

TEMPERATURE-DEPENDENCE
INDIUM NITRIDE
WURTZITE INN
GAP
DISLOCATIONS
MOBILITY
GROWTH

Access to Document

10.1063/1.2783214

Handle.net

Persistent link to portal record

Cite this

@article{e60b7e8a714f45e5a3e3309ab7de3862,

title = "X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset",

abstract = "The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.",

keywords = "TEMPERATURE-DEPENDENCE, INDIUM NITRIDE, WURTZITE INN, GAP, DISLOCATIONS, MOBILITY, GROWTH",

author = "King, \{P. D. C.\} and Veal, \{T. D.\} and Hatfield, \{S. A.\} and Jefferson, \{P. H.\} and McConville, \{C. F.\} and Kendrick, \{C. E.\} and Swartz, \{C. H.\} and Durbin, \{S. M.\}",

year = "2007",

month = sep,

day = "10",

doi = "10.1063/1.2783214",

language = "English",

volume = "91",

pages = "112103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

AU - King, P. D. C.

AU - Veal, T. D.

AU - Hatfield, S. A.

AU - Jefferson, P. H.

AU - McConville, C. F.

AU - Kendrick, C. E.

AU - Swartz, C. H.

AU - Durbin, S. M.

PY - 2007/9/10

Y1 - 2007/9/10

N2 - The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

AB - The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

KW - TEMPERATURE-DEPENDENCE

KW - INDIUM NITRIDE

KW - WURTZITE INN

KW - GAP

KW - DISLOCATIONS

KW - MOBILITY

KW - GROWTH

U2 - 10.1063/1.2783214

DO - 10.1063/1.2783214

M3 - Article

SN - 0003-6951

VL - 91

SP - 112103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Abstract

Keywords

Access to Document

Handle.net

Fingerprint

Cite this