X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

P. D. C. King; T. D. Veal; S. A. Hatfield; P. H. Jefferson; C. F. McConville; C. E. Kendrick; C. H. Swartz; S. M. Durbin

doi:10.1063/1.2783214

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

P. D. C. King, T. D. Veal, S. A. Hatfield, P. H. Jefferson, C. F. McConville, C. E. Kendrick, C. H. Swartz, S. M. Durbin

Research output: Contribution to journal › Article › peer-review

Abstract

The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

Original language	English
Pages (from-to)	112103
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	11
DOIs	https://doi.org/10.1063/1.2783214
Publication status	Published - 10 Sept 2007

Keywords

TEMPERATURE-DEPENDENCE
INDIUM NITRIDE
WURTZITE INN
GAP
DISLOCATIONS
MOBILITY
GROWTH

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10.1063/1.2783214

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@article{e60b7e8a714f45e5a3e3309ab7de3862,

title = "X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset",

abstract = "The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.",

keywords = "TEMPERATURE-DEPENDENCE, INDIUM NITRIDE, WURTZITE INN, GAP, DISLOCATIONS, MOBILITY, GROWTH",

author = "King, {P. D. C.} and Veal, {T. D.} and Hatfield, {S. A.} and Jefferson, {P. H.} and McConville, {C. F.} and Kendrick, {C. E.} and Swartz, {C. H.} and Durbin, {S. M.}",

year = "2007",

month = sep,

day = "10",

doi = "10.1063/1.2783214",

language = "English",

volume = "91",

pages = "112103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

AU - King, P. D. C.

AU - Veal, T. D.

AU - Hatfield, S. A.

AU - Jefferson, P. H.

AU - McConville, C. F.

AU - Kendrick, C. E.

AU - Swartz, C. H.

AU - Durbin, S. M.

PY - 2007/9/10

Y1 - 2007/9/10

N2 - The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

AB - The valence band offset of wurtzite InN(0001)/yttria stabilized cubic-zirconia (YSZ)(111) heterojunctions is determined by x-ray photoemission spectroscopy to be 1.19 +/- 0.17 eV giving a conduction band offset of 3.06 +/- 0.20 eV. Consequently, a type-I heterojunction forms between InN and YSZ in the straddling arrangement. The low lattice mismatch and high band offsets suggest potential for use of YSZ as a gate dielectric in high-frequency InN-based electronic devices.

KW - TEMPERATURE-DEPENDENCE

KW - INDIUM NITRIDE

KW - WURTZITE INN

KW - GAP

KW - DISLOCATIONS

KW - MOBILITY

KW - GROWTH

U2 - 10.1063/1.2783214

DO - 10.1063/1.2783214

M3 - Article

SN - 0003-6951

VL - 91

SP - 112103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

X-ray photoemission spectroscopy determination of the InN/yttria stabilized cubic-zirconia valence band offset

Abstract

Keywords

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