Wide wavelength tuning of GaAs/Al(x)Ga(1-x)As bound-to-continuum quantum cascade lasers by aluminum content control

J. Heinrich*, R. Langhans, M. S. Vitiello, G. Scamarcio, D. Indjin, C. A. Evans, Z. Ikonic, P. Harrison, Sven Höfling, A. Forchel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Tuning of the emission wavelength in GaAs/Al(x)Ga(1-x)As bound-to-continuum quantum cascade lasers with different Al mole fractions (x) is reported. By varying x in the range of 0.37-0.52, a shift of the emission wavelengths of over 4 mu m has been observed. Using this method, laser action in the range of 11.2-15.3 mu m at temperatures T >= 260 K has been demonstrated with a record value of similar to 340 K for GaAs based QCLs operating at 13.5 mu m. (C) 2008 American Institute of Physics.

Original languageEnglish
Article number141111
Number of pages3
JournalApplied Physics Letters
Volume92
Issue number14
DOIs
Publication statusPublished - 7 Apr 2008

Keywords

  • MU-M
  • TEMPERATURE PERFORMANCE
  • SEMICONDUCTOR

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