Abstract
Tuning of the emission wavelength in GaAs/Al(x)Ga(1-x)As bound-to-continuum quantum cascade lasers with different Al mole fractions (x) is reported. By varying x in the range of 0.37-0.52, a shift of the emission wavelengths of over 4 mu m has been observed. Using this method, laser action in the range of 11.2-15.3 mu m at temperatures T >= 260 K has been demonstrated with a record value of similar to 340 K for GaAs based QCLs operating at 13.5 mu m. (C) 2008 American Institute of Physics.
Original language | English |
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Article number | 141111 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 14 |
DOIs | |
Publication status | Published - 7 Apr 2008 |
Keywords
- MU-M
- TEMPERATURE PERFORMANCE
- SEMICONDUCTOR