Verification of band offsets and electron effective masses in GaAsN/GaAs quantum wells: Spectroscopic experiment versus 10-band k.p modeling

K. Ryczko*, G. Sek, P. Sitarek, A. Mika, J. Misiewicz, F. Langer, Sven Höfling, A. Forchel, M. Kamp

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Optical transitions in GaAs1-xNx/GaAs quantum wells (QWs) have been probed by two complementary techniques, modulation spectroscopy in a form of photoreflectance and surface photovoltage spectroscopy. Transition energies in QWs of various widths and N contents have been compared with the results of band structure calculations based on the 10-band k.p Hamiltonian. Due to the observation of higher order transitions in the measured spectra, the band gap discontinuities at the GaAsN/GaAs interface and the electron effective masses could be determined, both treated as semi-free parameters to get the best matching between the theoretical and experimental energies. We have obtained the chemical conduction band offset values of 86% for x = 1.2% and 83% for x = 2.2%, respectively. For these determined band offsets, the electron effective masses equal to about 0.09 m(o) in QWs with 1.2% N and 0.15 m(o) for the case of larger N content of 2.2%.

Original languageEnglish
Article number233508
Number of pages7
JournalJournal of Applied Physics
Volume113
Issue number23
DOIs
Publication statusPublished - 21 Jun 2013

Keywords

  • Surface photovoltage spectroscopy
  • Conduction band
  • Alloys
  • GaAsN/GaAs
  • Electroreflectance
  • Nitrogen

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