Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires.

P Schönherr; LJ Collins-McIntyre; S Zhang; P Kusch; S Reich; T Giles; D Daisenberger; D Prabhakaran; T Hesjedal

doi:10.1186/1556-276x-9-127

Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires.

P Schönherr, LJ Collins-McIntyre, S Zhang, P Kusch, S Reich, T Giles, D Daisenberger, D Prabhakaran, T Hesjedal

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

: High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.

Original language	Undefined/Unknown
Pages (from-to)	127
Number of pages	1
Journal	Nanoscale research letters
Volume	9
DOIs	https://doi.org/10.1186/1556-276x-9-127
Publication status	Published - 1 Jan 2014

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10.1186/1556-276x-9-127

Cite this

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title = "Vapour-liquid-solid growth of ternary Bi2Se2Te nanowires.",

abstract = ": High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.",

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AU - Schönherr, P

AU - Collins-McIntyre, LJ

AU - Zhang, S

AU - Kusch, P

AU - Reich, S

AU - Giles, T

AU - Daisenberger, D

AU - Prabhakaran, D

AU - Hesjedal, T

N1 - Electronic

PY - 2014/1/1

Y1 - 2014/1/1

N2 - : High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.

AB - : High-density growth of single-crystalline Bi2Se2Te nanowires was achieved via the vapour-liquid-solid process. The stoichiometry of samples grown at various substrate temperatures is precisely determined based on energy-dispersive X-ray spectroscopy, X-ray diffraction, and Raman spectroscopy on individual nanowires. We discuss the growth mechanism and present insights into the catalyst-precursor interaction.

U2 - 10.1186/1556-276x-9-127

DO - 10.1186/1556-276x-9-127

M3 - Article

SN - 1931-7573

VL - 9

SP - 127

JO - Nanoscale research letters

JF - Nanoscale research letters

ER -