Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T. D. Veal, P. D. C. King, S. A. Hatfield, L. R. Bailey, C. F. McConville, B. Martel, J. C. Moreno, E. Frayssinet, F. Semond, J. Zuniga-Perez

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71 Citations (Scopus)

Abstract

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

Original languageEnglish
Pages (from-to)202108
Number of pages3
JournalApplied Physics Letters
Volume93
Issue number20
DOIs
Publication statusPublished - 17 Nov 2008

Keywords

  • aluminium compounds
  • conduction bands
  • gallium compounds
  • III-V semiconductors
  • II-VI semiconductors
  • indium compounds
  • semiconductor heterojunctions
  • valence bands
  • wide band gap semiconductors
  • X-ray photoelectron spectra
  • zinc compounds
  • MOLECULAR-BEAM EPITAXY
  • II-VI
  • SEMICONDUCTORS
  • INN
  • ZNO
  • INTERFACE
  • GROWTH
  • STATES
  • GAP

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