Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T. D. Veal; P. D. C. King; S. A. Hatfield; L. R. Bailey; C. F. McConville; B. Martel; J. C. Moreno; E. Frayssinet; F. Semond; J. Zuniga-Perez

doi:10.1063/1.3032911

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T. D. Veal, P. D. C. King, S. A. Hatfield, L. R. Bailey, C. F. McConville, B. Martel, J. C. Moreno, E. Frayssinet, F. Semond, J. Zuniga-Perez

Research output: Contribution to journal › Article › peer-review

Abstract

The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

Original language	English
Pages (from-to)	202108
Number of pages	3
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3032911
Publication status	Published - 17 Nov 2008

Keywords

aluminium compounds
conduction bands
gallium compounds
III-V semiconductors
II-VI semiconductors
indium compounds
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
MOLECULAR-BEAM EPITAXY
II-VI
SEMICONDUCTORS
INN
ZNO
INTERFACE
GROWTH
STATES
GAP

Access to Document

10.1063/1.3032911

Cite this

@article{2f80cc9df8a44a518268138cb4b708f1,

title = "Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy",

abstract = "The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.",

keywords = "aluminium compounds, conduction bands, gallium compounds, III-V semiconductors, II-VI semiconductors, indium compounds, semiconductor heterojunctions, valence bands, wide band gap semiconductors, X-ray photoelectron spectra, zinc compounds, MOLECULAR-BEAM EPITAXY, II-VI, SEMICONDUCTORS, INN, ZNO, INTERFACE, GROWTH, STATES, GAP",

author = "Veal, {T. D.} and King, {P. D. C.} and Hatfield, {S. A.} and Bailey, {L. R.} and McConville, {C. F.} and B. Martel and Moreno, {J. C.} and E. Frayssinet and F. Semond and J. Zuniga-Perez",

year = "2008",

month = nov,

day = "17",

doi = "10.1063/1.3032911",

language = "English",

volume = "93",

pages = "202108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

AU - Veal, T. D.

AU - King, P. D. C.

AU - Hatfield, S. A.

AU - Bailey, L. R.

AU - McConville, C. F.

AU - Martel, B.

AU - Moreno, J. C.

AU - Frayssinet, E.

AU - Semond, F.

AU - Zuniga-Perez, J.

PY - 2008/11/17

Y1 - 2008/11/17

N2 - The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

AB - The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43 +/- 0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29 +/- 0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values.

KW - aluminium compounds

KW - conduction bands

KW - gallium compounds

KW - III-V semiconductors

KW - II-VI semiconductors

KW - indium compounds

KW - semiconductor heterojunctions

KW - valence bands

KW - wide band gap semiconductors

KW - X-ray photoelectron spectra

KW - zinc compounds

KW - MOLECULAR-BEAM EPITAXY

KW - II-VI

KW - SEMICONDUCTORS

KW - INN

KW - ZNO

KW - INTERFACE

KW - GROWTH

KW - STATES

KW - GAP

U2 - 10.1063/1.3032911

DO - 10.1063/1.3032911

M3 - Article

SN - 0003-6951

VL - 93

SP - 202108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Abstract

Keywords

Access to Document

Fingerprint

Cite this