Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

P. D. C. King; T. D. Veal; P. H. Jefferson; C. F. McConville; T. Wang; P. J. Parbrook; Hai Lu; W. J. Schaff

doi:10.1063/1.2716994

Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, Hai Lu, W. J. Schaff

Research output: Contribution to journal › Article › peer-review

Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.

Original language	English
Pages (from-to)	132105
Number of pages	3
Journal	Applied Physics Letters
Volume	90
Issue number	13
DOIs	https://doi.org/10.1063/1.2716994
Publication status	Published - 26 Mar 2007

Keywords

INN
GAP
ALN

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10.1063/1.2716994

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title = "Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy",

abstract = "The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.",

keywords = "INN, GAP, ALN",

author = "King, {P. D. C.} and Veal, {T. D.} and Jefferson, {P. H.} and McConville, {C. F.} and T. Wang and Parbrook, {P. J.} and Hai Lu and Schaff, {W. J.}",

year = "2007",

month = mar,

day = "26",

doi = "10.1063/1.2716994",

language = "English",

volume = "90",

pages = "132105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

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TY - JOUR

T1 - Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

AU - King, P. D. C.

AU - Veal, T. D.

AU - Jefferson, P. H.

AU - McConville, C. F.

AU - Wang, T.

AU - Parbrook, P. J.

AU - Lu, Hai

AU - Schaff, W. J.

PY - 2007/3/26

Y1 - 2007/3/26

N2 - The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.

AB - The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.

KW - INN

KW - GAP

KW - ALN

U2 - 10.1063/1.2716994

DO - 10.1063/1.2716994

M3 - Article

SN - 0003-6951

VL - 90

SP - 132105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

Abstract

Keywords

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