Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy

P. D. C. King, T. D. Veal, P. H. Jefferson, C. F. McConville, T. Wang, P. J. Parbrook, Hai Lu, W. J. Schaff

Research output: Contribution to journalArticlepeer-review

84 Citations (Scopus)

Abstract

The valence band offset of wurtzite-InN/AlN (0001) heterojunctions is determined by x-ray photoelectron spectroscopy to be 1.52 +/- 0.17 eV. Together with the resulting conduction band offset of 4.0 +/- 0.2 eV, a type-I heterojunction forms between InN and AlN in the straddling arrangement. (c) 2007 American Institute of Physics.

Original languageEnglish
Pages (from-to)132105
Number of pages3
JournalApplied Physics Letters
Volume90
Issue number13
DOIs
Publication statusPublished - 26 Mar 2007

Keywords

  • INN
  • GAP
  • ALN

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