Valence band density of states of zinc-blende and wurtzite InN from x-ray photoemission spectroscopy and first-principles calculations

P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmueller, F. Bechstedt, J. Schoermann, D. J. As, K. Lischka, Hai Lu, W. J. Schaff

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38 Citations (Scopus)

Abstract

The valence band density of states (VB-DOS) of zinc-blende InN(001) is investigated using a combination of high-resolution x-ray photoemission spectroscopy and quasiparticle corrected density functional theory. The zinc-blende VB-DOS can be characterized by three main regions: a plateau region after the initial rise in the DOS, followed by a shoulder on this region and a second narrow but intense peak, similar to other III-V and II-VI semiconductor compounds. Good general agreement was observed between the experimental and theoretical results. Tentative evidence for an s-d coupling due to the interaction between valence-like N 2s states and semicore-like In 4d states is also identified. Measurements and calculations for wurtzite InN(11 (2) over bar0) are shown to yield a VB-DOS similar to that of zinc-blende InN, although the nonzero crystal field and different Brillouin zone shape in this case lead to a more complicated band structure which modifies the DOS. In adlayers terminating the InN(11 (2) over bar0) surface are also evident in the experimental VB-DOS, and these are discussed.

Original languageEnglish
Pages (from-to)115213
Number of pages7
JournalPhysical Review. B, Condensed matter and materials physics
Volume77
Issue number11
DOIs
Publication statusPublished - Mar 2008

Keywords

  • NONPOLAR SURFACES
  • POLAR
  • GAP
  • SPECTRA

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