Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

Finlay D Morrison; JF Scott; M Alexe; TJ Leedham; T Tatsuta; O Tsuji

doi:10.1016/S0167-9317(02)00970-X

Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

Finlay D Morrison, JF Scott, M Alexe, TJ Leedham, T Tatsuta, O Tsuji

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. (C) 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	591-599
Number of pages	9
Journal	Microelectronic Engineering
Volume	66
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(02)00970-X
Publication status	Published - Apr 2003

Keywords

thin films
photonic devices
ferroelectric
gate oxides
ZIRCONIA
SILICON

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10.1016/S0167-9317(02)00970-X

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Morrison, F. D., Scott, JF., Alexe, M., Leedham, TJ., Tatsuta, T., & Tsuji, O. (2003). Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs. Microelectronic Engineering, 66(1-4), 591-599. https://doi.org/10.1016/S0167-9317(02)00970-X

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abstract = "We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. (C) 2002 Elsevier Science B.V. All rights reserved.",

keywords = "thin films, photonic devices, ferroelectric, gate oxides, ZIRCONIA, SILICON",

author = "Morrison, {Finlay D} and JF Scott and M Alexe and TJ Leedham and T Tatsuta and O Tsuji",

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doi = "10.1016/S0167-9317(02)00970-X",

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Morrison, FD, Scott, JF, Alexe, M, Leedham, TJ, Tatsuta, T & Tsuji, O 2003, 'Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs', Microelectronic Engineering, vol. 66, no. 1-4, pp. 591-599. https://doi.org/10.1016/S0167-9317(02)00970-X

Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs. / Morrison, Finlay D; Scott, JF; Alexe, M et al.
In: Microelectronic Engineering, Vol. 66, No. 1-4, 04.2003, p. 591-599.

Research output: Contribution to journal › Article › peer-review

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T1 - Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

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AU - Scott, JF

AU - Alexe, M

AU - Leedham, TJ

AU - Tatsuta, T

AU - Tsuji, O

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AB - We describe the application of misted chemical solution deposition (CSD) techniques to processing of ferroelectric-filled porous silicon photonic devices and of novel precursor medium- and high-dielectric constant films for gate oxide and memory applications. (C) 2002 Elsevier Science B.V. All rights reserved.

KW - thin films

KW - photonic devices

KW - ferroelectric

KW - gate oxides

KW - ZIRCONIA

KW - SILICON

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JO - Microelectronic Engineering

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ER -

Use of the `mist' (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs

Abstract

Keywords

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