Use of polymethylmethacrylate as an initial pattern transfer layer in fluorine-and chlorine-based reactive-ion etching

Engineering

• Pattern Transfer 100%
• Etching Process 50%
• Etch Rate 50%
• Photonic Band 50%
• Dielectric Layer 50%
• Aluminium Gallium Arsenide 50%
• Base Pressure 50%
• Nitride 50%
• Band Gap 50%

Chemistry

• Fluorine 100%
• Dielectric Material 50%
• Band Gap 50%
• Base 50%
• Photonics 50%
• Silicon 50%
• Nitride 50%

Material Science

• Reactive Ion Etching 100%
• Silicon Nitride 25%
• Aluminium Gallium Arsenide 25%
• Dielectric Material 25%
• Photonic Band Gap 25%