Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

D Labilloy; H Benisty; C Weisbuch; Thomas Fraser Krauss; R Houdre; U Oesterle

Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

D Labilloy, H Benisty, C Weisbuch, Thomas Fraser Krauss, R Houdre, U Oesterle

School of Physics and Astronomy

Research output: Other contribution

Abstract

We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of Physics.

Original language	English
Volume	71
Publication status	Published - 11 Aug 1997

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Cite this

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title = "Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals",

abstract = "We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of Physics.",

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T1 - Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

AU - Labilloy, D

AU - Benisty, H

AU - Weisbuch, C

AU - Krauss, Thomas Fraser

AU - Houdre, R

AU - Oesterle, U

N1 - Appl.Phys.Lett

PY - 1997/8/11

Y1 - 1997/8/11

N2 - We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of Physics.

AB - We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a waveguide geometry, and etched into a light-emitting (GaAs/InGaAs) semiconductor. By means of a guiding layer, the spontaneous emission of the material is used as a built-in source to probe the properties of the etched microstructure, conveniently compared to the usual measurement schemes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of Physics.

KW - SUPERLATTICES

UR - http://www.scopus.com/inward/record.url?scp=0031209460&partnerID=8YFLogxK

M3 - Other contribution

VL - 71

ER -

Use of guided spontaneous emission of a semiconductor to probe the optical properties of two-dimensional photonic crystals

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