Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King; T. D. Veal; C. F. McConville; F. Fuchs; J. Furthmueller; F. Bechstedt; P. Schley; R. Goldhahn; J. Schoermann; D. J. As; K. Lischka; D. Muto; H. Naoi; Y. Nanishi; Hai Lu; W. J. Schaff

doi:10.1063/1.2775807

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmueller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schoermann, D. J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, Hai Lu, W. J. Schaff

Research output: Contribution to journal › Article › peer-review

Abstract

Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.

Original language	English
Pages (from-to)	092101
Number of pages	3
Journal	Applied Physics Letters
Volume	91
Issue number	9
DOIs	https://doi.org/10.1063/1.2775807
Publication status	Published - 27 Aug 2007

Keywords

MOLECULAR-BEAM EPITAXY
BAND OFFSETS
GROWTH
LAYERS
INVERSION
GAN

Access to Document

10.1063/1.2775807

Cite this

King, P. D. C., Veal, T. D., McConville, C. F., Fuchs, F., Furthmueller, J., Bechstedt, F., Schley, P., Goldhahn, R., Schoermann, J., As, D. J., Lischka, K., Muto, D., Naoi, H., Nanishi, Y., Lu, H., & Schaff, W. J. (2007). Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces. Applied Physics Letters, 91(9), 092101. https://doi.org/10.1063/1.2775807

@article{ea220e4eb4ab444d8c594bfe54463136,

title = "Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces",

abstract = "Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.",

keywords = "MOLECULAR-BEAM EPITAXY, BAND OFFSETS, GROWTH, LAYERS, INVERSION, GAN",

author = "King, \{P. D. C.\} and Veal, \{T. D.\} and McConville, \{C. F.\} and F. Fuchs and J. Furthmueller and F. Bechstedt and P. Schley and R. Goldhahn and J. Schoermann and As, \{D. J.\} and K. Lischka and D. Muto and H. Naoi and Y. Nanishi and Hai Lu and Schaff, \{W. J.\}",

year = "2007",

month = aug,

day = "27",

doi = "10.1063/1.2775807",

language = "English",

volume = "91",

pages = "092101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

King, PDC, Veal, TD, McConville, CF, Fuchs, F, Furthmueller, J, Bechstedt, F, Schley, P, Goldhahn, R, Schoermann, J, As, DJ, Lischka, K, Muto, D, Naoi, H, Nanishi, Y, Lu, H & Schaff, WJ 2007, 'Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces', Applied Physics Letters, vol. 91, no. 9, pp. 092101. https://doi.org/10.1063/1.2775807

TY - JOUR

T1 - Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

AU - King, P. D. C.

AU - Veal, T. D.

AU - McConville, C. F.

AU - Fuchs, F.

AU - Furthmueller, J.

AU - Bechstedt, F.

AU - Schley, P.

AU - Goldhahn, R.

AU - Schoermann, J.

AU - As, D. J.

AU - Lischka, K.

AU - Muto, D.

AU - Naoi, H.

AU - Nanishi, Y.

AU - Lu, Hai

AU - Schaff, W. J.

PY - 2007/8/27

Y1 - 2007/8/27

N2 - Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.

AB - Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.

KW - MOLECULAR-BEAM EPITAXY

KW - BAND OFFSETS

KW - GROWTH

KW - LAYERS

KW - INVERSION

KW - GAN

UR - https://www.scopus.com/pages/publications/34548442895

U2 - 10.1063/1.2775807

DO - 10.1063/1.2775807

M3 - Article

SN - 0003-6951

VL - 91

SP - 092101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this