Abstract
Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.
Original language | English |
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Pages (from-to) | 092101 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 9 |
DOIs | |
Publication status | Published - 27 Aug 2007 |
Keywords
- MOLECULAR-BEAM EPITAXY
- BAND OFFSETS
- GROWTH
- LAYERS
- INVERSION
- GAN