Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. D. C. King, T. D. Veal, C. F. McConville, F. Fuchs, J. Furthmueller, F. Bechstedt, P. Schley, R. Goldhahn, J. Schoermann, D. J. As, K. Lischka, D. Muto, H. Naoi, Y. Nanishi, Hai Lu, W. J. Schaff

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106 Citations (Scopus)

Abstract

Electron accumulation is found to occur at the surface of wurtzite ( 11 (2) over bar0), (0001) , and (000 (1) over bar) and zinc-blende (001) InN using x-ray photoemission spectroscopy. The accumulation is shown to be a universal feature of InN surfaces. This is due to the low Gamma-point conduction band minimum lying significantly below the charge neutrality level. (c) 2007 American Institute of Physics.

Original languageEnglish
Pages (from-to)092101
Number of pages3
JournalApplied Physics Letters
Volume91
Issue number9
DOIs
Publication statusPublished - 27 Aug 2007

Keywords

  • MOLECULAR-BEAM EPITAXY
  • BAND OFFSETS
  • GROWTH
  • LAYERS
  • INVERSION
  • GAN

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