Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Rajesh K. Katiyar*, Yogesh Sharma, Danilo G. Barrionuevo Diestra, Pankaj Misra, Sudheendran Kooriyattil, Shojan P. Pavunny, Gerardo Morell, Brad R. Weiner, J. F. Scott, Ram S. Katiyar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).

Original languageEnglish
Article number037109
Number of pages6
JournalAIP Advances
Issue number3
Early online date6 Mar 2015
Publication statusPublished - Mar 2015


  • BIFEO3 Ceramics
  • Devices
  • Polarization


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