Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Rajesh K. Katiyar; Yogesh Sharma; Danilo G. Barrionuevo Diestra; Pankaj Misra; Sudheendran Kooriyattil; Shojan P. Pavunny; Gerardo Morell; Brad R. Weiner; J. F. Scott; Ram S. Katiyar

doi:10.1063/1.4914475

Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Rajesh K. Katiyar^*, Yogesh Sharma, Danilo G. Barrionuevo Diestra, Pankaj Misra, Sudheendran Kooriyattil, Shojan P. Pavunny, Gerardo Morell, Brad R. Weiner, J. F. Scott, Ram S. Katiyar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).

Original language	English
Article number	037109
Number of pages	6
Journal	AIP Advances
Volume	5
Issue number	3
Early online date	6 Mar 2015
DOIs	https://doi.org/10.1063/1.4914475
Publication status	Published - Mar 2015

Keywords

BIFEO3 Ceramics
Devices
Polarization

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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@article{71064f603a7248fc8c71a2e850a1ec68,

title = "Unipolar resistive switching in planar Pt/BiFeO3/Pt structure",

abstract = "We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).",

keywords = "BIFEO3 Ceramics, Devices, Polarization",

author = "Katiyar, {Rajesh K.} and Yogesh Sharma and Diestra, {Danilo G. Barrionuevo} and Pankaj Misra and Sudheendran Kooriyattil and Pavunny, {Shojan P.} and Gerardo Morell and Weiner, {Brad R.} and Scott, {J. F.} and Katiyar, {Ram S.}",

note = "This work was supported by the NASA EPSCoR Grant # NNX13AB22A. Financial support to various researchers from IFN-NSF grant # EPS 1002410 (RSK, DB, YS and BRW) is gratefully acknowledged. S. K. is thankful to UGC, India for a Raman fellowship under Indo-US 21st century knowledge initiatives (No:5-53/2013(I.C)).",

year = "2015",

month = mar,

doi = "10.1063/1.4914475",

language = "English",

volume = "5",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics",

number = "3",

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TY - JOUR

T1 - Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

AU - Katiyar, Rajesh K.

AU - Sharma, Yogesh

AU - Diestra, Danilo G. Barrionuevo

AU - Misra, Pankaj

AU - Kooriyattil, Sudheendran

AU - Pavunny, Shojan P.

AU - Morell, Gerardo

AU - Weiner, Brad R.

AU - Scott, J. F.

AU - Katiyar, Ram S.

N1 - This work was supported by the NASA EPSCoR Grant # NNX13AB22A. Financial support to various researchers from IFN-NSF grant # EPS 1002410 (RSK, DB, YS and BRW) is gratefully acknowledged. S. K. is thankful to UGC, India for a Raman fellowship under Indo-US 21st century knowledge initiatives (No:5-53/2013(I.C)).

PY - 2015/3

Y1 - 2015/3

N2 - We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).

AB - We report unipolar resistive switching suitable for nonvolatile memory applications in polycrystalline BiFeO3 thin films in planar electrode configuration with non-overlapping Set and Reset voltages, On/Off resistance ratio of similar to 10(4) and good data retention (verified for up to 3,000 s). We have also observed photovoltaic response in both high and low resistance states, where the photocurrent density was about three orders of magnitude higher in the low resistance state as compared to the high resistance state at an illumination power density of similar to 100 mW/cm(2). Resistive switching mechanisms in both resistance states of the planar device can be explained by using the conduction filament (thermo-chemical) model. (C) 2015 Author(s).

KW - BIFEO3 Ceramics

KW - Devices

KW - Polarization

U2 - 10.1063/1.4914475

DO - 10.1063/1.4914475

M3 - Article

SN - 2158-3226

VL - 5

JO - AIP Advances

JF - AIP Advances

IS - 3

M1 - 037109

ER -

Unipolar resistive switching in planar Pt/BiFeO3/Pt structure

Abstract

Keywords

UN SDGs

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