Unintentional conductivity of indium nitride: transport modelling and microscopic origins

P. D. C. King, T. D. Veal, C. F. McConville

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37 Citations (Scopus)

Abstract

A three-region model for the high n-type conductivity in InN, including contributions from the bulk, surface and buffer layer interface of the sample, is considered. In particular, a parallel conduction analysis is used to show that this model can account for the carrier concentration and mobility variation with film thickness that has previously been determined from single-field Hall effect measurements. Microscopic origins for the donors in each region are considered, and the overriding tendency towards n-type conductivity is discussed in terms of the bulk band structure of InN.

Original languageEnglish
Pages (from-to)174201
Number of pages7
JournalJournal of Physics: Condensed Matter
Volume21
Issue number17
DOIs
Publication statusPublished - 29 Apr 2009

Keywords

  • MOLECULAR-BEAM EPITAXY
  • FUNDAMENTAL-BAND GAP
  • HEXAGONAL INN
  • ELECTRON ACCUMULATION
  • SYNCHROTRON-RADIATION
  • TERAHERTZ EMISSION
  • NONPOLAR SURFACES
  • POLAR INN
  • SEMICONDUCTORS
  • FILMS

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