Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P. D. C. King; T. D. Veal; P. H. Jefferson; J. Zuniga-Perez; V. Munoz-Sanjose; C. F. McConville

doi:10.1103/PhysRevB.79.035203

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P. D. C. King, T. D. Veal, P. H. Jefferson, J. Zuniga-Perez, V. Munoz-Sanjose, C. F. McConville

Research output: Contribution to journal › Article › peer-review

Abstract

In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

Original language	English
Pages (from-to)	035203
Number of pages	5
Journal	Physical Review. B, Condensed matter and materials physics
Volume	79
Issue number	3
DOIs	https://doi.org/10.1103/PhysRevB.79.035203
Publication status	Published - Jan 2009

Keywords

band structure
cadmium compounds
defect states
electrical conductivity
II-VI semiconductors
impurities
semiconductor materials
surface states
ELECTRONIC-STRUCTURE
HYDROGEN
EPITAXY
ZNO

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10.1103/PhysRevB.79.035203

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title = "Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO",

abstract = "In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.",

keywords = "band structure, cadmium compounds, defect states, electrical conductivity, II-VI semiconductors, impurities, semiconductor materials, surface states, ELECTRONIC-STRUCTURE, HYDROGEN, EPITAXY, ZNO",

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year = "2009",

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doi = "10.1103/PhysRevB.79.035203",

language = "English",

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T1 - Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

AU - King, P. D. C.

AU - Veal, T. D.

AU - Jefferson, P. H.

AU - Zuniga-Perez, J.

AU - Munoz-Sanjose, V.

AU - McConville, C. F.

PY - 2009/1

Y1 - 2009/1

N2 - In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

AB - In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

KW - band structure

KW - cadmium compounds

KW - defect states

KW - electrical conductivity

KW - II-VI semiconductors

KW - impurities

KW - semiconductor materials

KW - surface states

KW - ELECTRONIC-STRUCTURE

KW - HYDROGEN

KW - EPITAXY

KW - ZNO

UR - https://www.scopus.com/pages/publications/59749099849

U2 - 10.1103/PhysRevB.79.035203

DO - 10.1103/PhysRevB.79.035203

M3 - Article

SN - 1098-0121

VL - 79

SP - 035203

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

IS - 3

ER -

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

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Keywords

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