Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

P. D. C. King, T. D. Veal, P. H. Jefferson, J. Zuniga-Perez, V. Munoz-Sanjose, C. F. McConville

Research output: Contribution to journalArticlepeer-review

81 Citations (Scopus)

Abstract

In contrast to conventional semiconductors, native defects, hydrogen impurities, and surface states are all found to be donors in n-type CdO. Using this as a model system, the electrical behaviors of defects, dopants, and surface states in semiconductors are unified by a single energy level, the charge neutrality level, giving much insight into current materials and allowing a band-structure engineering scheme for obtaining desired custom electronic properties in new compound semiconductors.

Original languageEnglish
Pages (from-to)035203
Number of pages5
JournalPhysical Review. B, Condensed matter and materials physics
Volume79
Issue number3
DOIs
Publication statusPublished - Jan 2009

Keywords

  • band structure
  • cadmium compounds
  • defect states
  • electrical conductivity
  • II-VI semiconductors
  • impurities
  • semiconductor materials
  • surface states
  • ELECTRONIC-STRUCTURE
  • HYDROGEN
  • EPITAXY
  • ZNO

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