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Ultra-small mode volume polariton condensation via precision He+ ion implantation

Y. C. Balas*, X. Zhou, E. Cherotchenko, I. Kuznetsov, S. K. Rajendran, G. G. Paschos, A. V. Trifonov, A. Nalitov, H. Ohadi, P. G. Savvidis*

*Corresponding author for this work

Research output: Working paperPreprint

Abstract

We present a novel method for generating potential landscapes in GaAs microcavities through focused He+ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 µm and a three-dimensional mode volume of only ≈ 0.6 µm3 , small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.
Original languageEnglish
PublisherarXiv
Number of pages7
Publication statusPublished - 27 Jun 2025

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