Abstract
We present a novel method for generating potential landscapes in GaAs microcavities through focused He+ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 µm and a three-dimensional mode volume of only ≈ 0.6 µm3 , small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.
| Original language | English |
|---|---|
| Publisher | arXiv |
| Number of pages | 7 |
| Publication status | Published - 27 Jun 2025 |
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Dive into the research topics of 'Ultra-small mode volume polariton condensation via precision He+ ion implantation'. Together they form a unique fingerprint.Projects
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Perovskite dipolaritons for room tempera: Perovskite Dipolaritons for Room Temperature Quantum Applications
Ohadi, H. (PI)
2/01/23 → 1/01/26
Project: Standard
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