Ultra-small mode volume polariton condensation via precision He+ implantation

Yannis C. Balas; Xiaoqing Zhou; Evgeniia Cherotchenko; Ivan Kuznetsov; Sai Kiran Rajendran; Giannis G. Paschos; Artur V. Trifonov; Anton Nalitov; Hamid Ohadi; Pavlos G. Savvidis

doi:10.1016/j.scib.2026.06.026

Ultra-small mode volume polariton condensation via precision He⁺ implantation

Yannis C. Balas^*
, Xiaoqing Zhou
, Evgeniia Cherotchenko
, Ivan Kuznetsov
, Sai Kiran Rajendran
, Giannis G. Paschos
, Artur V. Trifonov
, Anton Nalitov
, Hamid Ohadi
, Pavlos G. Savvidis^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present a novel method for generating potential landscapes in GaAs microcavities through focused He⁺implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 μm and a three-dimensional mode volume of only ≈ 0.6 μm³, small enough to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the sub-μm regime.

Original language	English
Pages (from-to)	3617-3623
Number of pages	7
Journal	Science Bulletin
Volume	71
Issue number	14
DOIs	https://doi.org/10.1016/j.scib.2026.06.026
Publication status	Published - 30 Jul 2026

Keywords

Ion implantation
Polaritonic condensates
Confinement
Focused ion beam
Microcavity

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1 Finished

Perovskite dipolaritons for room tempera: Perovskite Dipolaritons for Room Temperature Quantum Applications
Ohadi, H. (PI)
Leverhulme Trust
2/01/23 → 1/01/26
Project: Standard

1 Preprint

Ultra-small mode volume polariton condensation via precision He⁺ ion implantation
Balas, Y. C., Zhou, X., Cherotchenko, E., Kuznetsov, I., Rajendran, S. K., Paschos, G. G., Trifonov, A. V., Nalitov, A., Ohadi, H. & Savvidis, P. G., 27 Jun 2025, arXiv, 7 p.
Research output: Working paper › Preprint

Open Access

Cite this

@article{56f75b5e2a384cadbf09c5ea74a2df3e,

title = "Ultra-small mode volume polariton condensation via precision He+ implantation",

abstract = "We present a novel method for generating potential landscapes in GaAs microcavities through focused He+ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 μm and a three-dimensional mode volume of only ≈ 0.6 μm3, small enough to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the sub-μm regime.",

keywords = "Ion implantation, Polaritonic condensates, Confinement, Focused ion beam, Microcavity",

author = "Balas, \{Yannis C.\} and Xiaoqing Zhou and Evgeniia Cherotchenko and Ivan Kuznetsov and Rajendran, \{Sai Kiran\} and Paschos, \{Giannis G.\} and Trifonov, \{Artur V.\} and Anton Nalitov and Hamid Ohadi and Savvidis, \{Pavlos G.\}",

note = "Funding: Pavlos G. Savvidis acknowledges support by the Innovation Program for Quantum Science and Technology (2023ZD0300300), the Innovation Resource Allocation of Westlake University-Zhejiang Provincial Natural Science Foundation of China under Grant No. XHD24A2401, and the Westlake University project No. 102510036022301. Anton Nalitov acknowledges support by the Russian Science Foundation under Grant No. 25–12-00135. Sai Kiran Rajendran and Hamid Ohadi acknowledge support from the Leverhulme Trust through Grant No. RPG-2022–188. Artur V. Trifonov acknowledges Saint Petersburg State University (Grant No. 125022803069–4). The authors acknowledge the SPbU Resource Center {\textquoteleft}Nanotechnology{\textquoteright} for the helium implantation. This work was supported by the Hellenic Founndation for Research and Innovation (H.F.R.I.) through the QuComPol project (Project No. 25442).",

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doi = "10.1016/j.scib.2026.06.026",

language = "English",

volume = "71",

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journal = "Science Bulletin",

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T1 - Ultra-small mode volume polariton condensation via precision He+ implantation

AU - Balas, Yannis C.

AU - Zhou, Xiaoqing

AU - Cherotchenko, Evgeniia

AU - Kuznetsov, Ivan

AU - Rajendran, Sai Kiran

AU - Paschos, Giannis G.

AU - Trifonov, Artur V.

AU - Nalitov, Anton

AU - Ohadi, Hamid

AU - Savvidis, Pavlos G.

N1 - Funding: Pavlos G. Savvidis acknowledges support by the Innovation Program for Quantum Science and Technology (2023ZD0300300), the Innovation Resource Allocation of Westlake University-Zhejiang Provincial Natural Science Foundation of China under Grant No. XHD24A2401, and the Westlake University project No. 102510036022301. Anton Nalitov acknowledges support by the Russian Science Foundation under Grant No. 25–12-00135. Sai Kiran Rajendran and Hamid Ohadi acknowledge support from the Leverhulme Trust through Grant No. RPG-2022–188. Artur V. Trifonov acknowledges Saint Petersburg State University (Grant No. 125022803069–4). The authors acknowledge the SPbU Resource Center ‘Nanotechnology’ for the helium implantation. This work was supported by the Hellenic Founndation for Research and Innovation (H.F.R.I.) through the QuComPol project (Project No. 25442).

PY - 2026/7/30

Y1 - 2026/7/30

N2 - We present a novel method for generating potential landscapes in GaAs microcavities through focused He+ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 μm and a three-dimensional mode volume of only ≈ 0.6 μm3, small enough to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the sub-μm regime.

AB - We present a novel method for generating potential landscapes in GaAs microcavities through focused He+ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size ≤ 1.2 μm and a three-dimensional mode volume of only ≈ 0.6 μm3, small enough to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic (< 300 nm) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the sub-μm regime.

KW - Ion implantation

KW - Polaritonic condensates

KW - Confinement

KW - Focused ion beam

KW - Microcavity

U2 - 10.1016/j.scib.2026.06.026

DO - 10.1016/j.scib.2026.06.026

M3 - Article

C2 - 42331713

SN - 2095-9273

VL - 71

SP - 3617

EP - 3623

JO - Science Bulletin

JF - Science Bulletin

IS - 14

ER -

Ultra-small mode volume polariton condensation via precision He+ implantation

Abstract

Keywords

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Perovskite dipolaritons for room tempera: Perovskite Dipolaritons for Room Temperature Quantum Applications

Research output

Ultra-small mode volume polariton condensation via precision He+ ion implantation

Cite this

Ultra-small mode volume polariton condensation via precision He⁺ implantation

Ultra-small mode volume polariton condensation via precision He⁺ ion implantation