Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation

Y. C. Balas; X. Zhou; E. Cherotchenko; I. Kuznetsov; S. K. Rajendran; G. G. Paschos; A. V. Trifonov; A. Nalitov; H. Ohadi; P. G. Savvidis

Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation

Y. C. Balas, X. Zhou, E. Cherotchenko, I. Kuznetsov, S. K. Rajendran, G. G. Paschos, A. V. Trifonov, A. Nalitov, H. Ohadi, P. G. Savvidis

Research output: Working paper › Preprint

Abstract

We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{\mu m}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{\mu m^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.

Original language	Undefined/Unknown
Publication status	Published - 27 Jun 2025

Keywords

cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.other

Cite this

@techreport{50af37c422e14337ad546a9db8be4cc6,

title = "Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation",

abstract = "We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{\mu m}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{\mu m^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.",

keywords = "cond-mat.mes-hall, cond-mat.mtrl-sci, cond-mat.other",

author = "Balas, {Y. C.} and X. Zhou and E. Cherotchenko and I. Kuznetsov and Rajendran, {S. K.} and Paschos, {G. G.} and Trifonov, {A. V.} and A. Nalitov and H. Ohadi and Savvidis, {P. G.}",

year = "2025",

month = jun,

day = "27",

language = "Undefined/Unknown",

type = "WorkingPaper",

}

TY - UNPB

T1 - Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation

AU - Balas, Y. C.

AU - Zhou, X.

AU - Cherotchenko, E.

AU - Kuznetsov, I.

AU - Rajendran, S. K.

AU - Paschos, G. G.

AU - Trifonov, A. V.

AU - Nalitov, A.

AU - Ohadi, H.

AU - Savvidis, P. G.

PY - 2025/6/27

Y1 - 2025/6/27

N2 - We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{\mu m}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{\mu m^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.

AB - We present a novel method for generating potential landscapes in GaAs microcavities through focused $He^{+}$ implantation. The ion beam imprints micron-scale patterns of non-radiative centers that deplete the exciton reservoir and form a loss-defined potential minimum. Under non-resonant pumping, the resulting traps have a lateral size $\le 1.2 ~\mathrm{\mu m}$ and a three-dimensional mode volume of only $\approx 0.6 ~ \mathrm{\mu m^3}$, small enough to to support a single polariton condensate mode. The implantation process maintains strong coupling and provides lithographic ($ < 300 ~ \mathrm{nm}$) resolution. These loss-engineered traps effectively overcome the micrometer-scale limitations of conventional microcavity patterning techniques, opening new avenues for device development and polariton research within the quantum regime.

KW - cond-mat.mes-hall

KW - cond-mat.mtrl-sci

KW - cond-mat.other

M3 - Preprint

BT - Ultra-small Mode Volume Polariton Condensation via Precision $He^+$ Ion Implantation

ER -