Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Ch. Schuller; Sven Höfling; A. Forchel; C. Etrich; R. Iliew; F. Lederer; T. Pertsch; J. P. Reithmaier

doi:10.1049/el:20062195

Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Ch. Schuller^*, Sven Höfling, A. Forchel, C. Etrich, R. Iliew, F. Lederer, T. Pertsch, J. P. Reithmaier

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mu m were fabricated. The maximum transmittance of a 90 degrees bend with radius of 2 mu m can be enhanced to almost 99% at a wavelength of 1.55 mu m, which corresponds to an attenuation factor of 0.05 dB per bend.

Original language	English
Pages (from-to)	1280-1281
Number of pages	2
Journal	Electronics Letters
Volume	42
Issue number	22
DOIs	https://doi.org/10.1049/el:20062195
Publication status	Published - 26 Oct 2006

Keywords

WAVE-GUIDES
TRANSMISSION
RESONATORS

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10.1049/el:20062195

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title = "Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors",

abstract = "Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mu m were fabricated. The maximum transmittance of a 90 degrees bend with radius of 2 mu m can be enhanced to almost 99% at a wavelength of 1.55 mu m, which corresponds to an attenuation factor of 0.05 dB per bend.",

keywords = "WAVE-GUIDES, TRANSMISSION, RESONATORS",

author = "Ch. Schuller and Sven H{\"o}fling and A. Forchel and C. Etrich and R. Iliew and F. Lederer and T. Pertsch and Reithmaier, {J. P.}",

year = "2006",

month = oct,

day = "26",

doi = "10.1049/el:20062195",

language = "English",

volume = "42",

pages = "1280--1281",

journal = "Electronics Letters",

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TY - JOUR

T1 - Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

AU - Schuller, Ch.

AU - Höfling, Sven

AU - Forchel, A.

AU - Etrich, C.

AU - Iliew, R.

AU - Lederer, F.

AU - Pertsch, T.

AU - Reithmaier, J. P.

PY - 2006/10/26

Y1 - 2006/10/26

N2 - Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mu m were fabricated. The maximum transmittance of a 90 degrees bend with radius of 2 mu m can be enhanced to almost 99% at a wavelength of 1.55 mu m, which corresponds to an attenuation factor of 0.05 dB per bend.

AB - Using deeply etched photonic wires on gallium arsenide, ultra-small bent waveguides with radii of curvature below 1 mu m were fabricated. The maximum transmittance of a 90 degrees bend with radius of 2 mu m can be enhanced to almost 99% at a wavelength of 1.55 mu m, which corresponds to an attenuation factor of 0.05 dB per bend.

KW - WAVE-GUIDES

KW - TRANSMISSION

KW - RESONATORS

U2 - 10.1049/el:20062195

DO - 10.1049/el:20062195

M3 - Article

SN - 0013-5194

VL - 42

SP - 1280

EP - 1281

JO - Electronics Letters

JF - Electronics Letters

IS - 22

ER -

Ultra-compact high transmittance photonic wire bends for monolithic integration on III/V-semiconductors

Abstract

Keywords

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