Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

M. Motyka; M. Dyksik; K. Ryczko; R. Weih; M. Dallner; Sven Höfling; M. Kamp; G. Sęk; J. Misiewicz

doi:10.1063/1.4943193

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

M. Motyka, M. Dyksik, K. Ryczko, R. Weih, M. Dallner, Sven Höfling, M. Kamp, G. Sęk, J. Misiewicz

Research output: Contribution to journal › Article › peer-review

Abstract

Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.

Original language	English
Journal	Applied Physics Letters
Volume	108
Issue number	10
DOIs	https://doi.org/10.1063/1.4943193
Publication status	Published - 7 Mar 2016

Access to Document

10.1063/1.4943193Licence: CC BY

Hofling_2016_AIP_TypeII_CCBY
© 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Final published version, 1.17 MBLicence: CC BY

Handle.net

Persistent link

Cite this

@article{f7049490d0a54b94ac4442ee4879fa70,

title = "Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing",

abstract = "Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.",

author = "M. Motyka and M. Dyksik and K. Ryczko and R. Weih and M. Dallner and Sven H{\"o}fling and M. Kamp and G. S{\c e}k and J. Misiewicz",

note = "This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 636930. We would also like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.",

year = "2016",

month = mar,

day = "7",

doi = "10.1063/1.4943193",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

AU - Motyka, M.

AU - Dyksik, M.

AU - Ryczko, K.

AU - Weih, R.

AU - Dallner, M.

AU - Höfling, Sven

AU - Kamp, M.

AU - Sęk, G.

AU - Misiewicz, J.

N1 - This project has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 636930. We would also like to acknowledge the National Science Centre of Poland for support within Grant No. 2014/15/B/ST7/04663.

PY - 2016/3/7

Y1 - 2016/3/7

N2 - Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.

AB - Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.

UR - https://www.scopus.com/pages/publications/85009233074

U2 - 10.1063/1.4943193

DO - 10.1063/1.4943193

M3 - Article

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

Abstract

Access to Document

Handle.net

Other files and links

Fingerprint

Cite this