Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing

M. Motyka, M. Dyksik, K. Ryczko, R. Weih, M. Dallner, Sven Höfling, M. Kamp, G. Sęk, J. Misiewicz

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Optical properties of modified type II W-shaped quantum wells have been investigated with the aim to be utilized in interband cascade lasers. The results show that introducing a tensely strained GaAsSb layer, instead of a commonly used compressively strained GaInSb, allows employing the active transition involving valence band states with a significant admixture of the light holes. Theoretical predictions of multiband k·p theory have been experimentally verified by using photoluminescence and polarization dependent photoreflectance measurements. These results open a pathway for practical realization of mid-infrared lasing devices with uncommon polarization properties including, for instance, polarization-independent midinfrared light emitters.
Original languageEnglish
JournalApplied Physics Letters
Volume108
Issue number10
DOIs
Publication statusPublished - 7 Mar 2016

Fingerprint

Dive into the research topics of 'Type-II quantum wells with tensile-strained GaAsSb layers for interband cascade lasers with tailored valence band mixing'. Together they form a unique fingerprint.

Cite this