Tunneling electroresistance in multiferroic heterostructures

Material Science

• Ferroelectric Material 100%
• Heterojunction 100%
• Multiferroic Material 100%
• Ultrathin Film 50%
• Platinum 50%
• Density 50%
• Film 50%
• Atomic Force Microscopy 50%
• Diffraction Pattern 50%
• Capacitance 50%
• Surface Property 50%

Engineering

• Heterostructures 100%
• Tunnel Construction 100%
• Bias Voltage 33%
• Resistance Ratio 33%
• Ray Diffraction Pattern 33%
• Smaller Probe 33%
• Magnetic Field 33%
• Thin Films 33%
• Room Temperature 33%
• Atomic Force Microscopy 33%
• Coercive Field 33%
• External Magnetic Field 33%
• Tunnel 33%
• Surface Quality 33%

Physics

• Multiferroic Material 100%
• Ferroelectric Material 100%
• Magnetic Field 100%
• Room Temperature 50%
• Atomic Force Microscopy 50%
• Diffraction Pattern 50%
• Thin Films 50%
• Electron Tunneling 50%