Tunneling electroresistance in multiferroic heterostructures

D. Barrionuevo*, Le Zhang, N. Ortega, A. Sokolov, A. Kumar, Pankaj Misra, J. F. Scott, R. S. Katiyar

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

We demonstrate the room temperature polar switching and tunneling in PbZr0.52Ti0.48O3 (PZT) ultra-thin films of thickness 3-7 nm, sandwiched between platinum metal and ferromagnetic La0.67Sr0.33MnO3 (LSMO) layers, which also shows magnetic field dependent tunnel current switching in Pt/PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3 heterostructures. The epitaxial nature, surface quality and ferroelectric switching of heterostructured films were examined with the help of x-ray diffraction patterns, atomic force microscopy, and piezo force microscopy, respectively. The capacitance versus voltage graphs show butterfly loops above the coercive field (> +/- 3 V) of PZT for small probe area (similar to 16 mu m(2)). The effect of ferroelectric switching was observed in current density versus voltage curves with a large variation in high-resistance/low-resistance (HRS/LRS) ratio (2:1 to 100:1), however, these effects were more prominent in the presence of in-plane external magnetic field. The conductance is fitted with Brinkman's model, and the parabolic conductance upon bias voltage implies electron tunneling governs the transport.

Original languageEnglish
Article number495203
Number of pages9
JournalNanotechnology
Volume25
Issue number49
DOIs
Publication statusPublished - 12 Dec 2014

Keywords

  • ferroelectric tunnel junctions
  • tunneling electroresistance
  • transport properties
  • ultrathin films
  • GIANT ELECTRORESISTANCE
  • PEROVSKITE FILMS
  • JUNCTIONS
  • FERROELECTRICITY
  • POLARIZATION
  • TEMPERATURE
  • CONDUCTANCE

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