Tunable carrier multiplication and cooling in graphene

J.C. Johannsen, S. Ulstrup, A. Crepaldi, F. Cilento, M. Zacchigna, J.A. Miwa, C. Cacho, R.T. Chapman, E. Springate, F. Fromm, C. Raidel, T. Seyller, Phil King, F. Parmigiani, M. Grioni, P. Hofmann

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Abstract

Time- and angle-resolved photoemission measurements on two doped graphene samples displaying different doping levels reveal remarkable differences in the ultrafast dynamics of the hot carriers in the Dirac cone. In the more strongly (n-)doped graphene, we observe larger carrier multiplication factors (>3) and a significantly faster phonon-mediated cooling of the carriers back to equilibrium compared to in the less (p-)doped graphene. These results suggest that a careful tuning of the doping level allows for an effective manipulation of graphene's dynamical response to a photoexcitation.
Original languageEnglish
Pages (from-to)326-331
Number of pages6
JournalNano Letters
Volume15
Issue number1
Early online date2 Dec 2014
DOIs
Publication statusPublished - 14 Jan 2015

Keywords

  • Epitaxial graphene
  • Hot carrier dynamics
  • Charge carrier tunability
  • Carrier multiplication
  • Time-resolved ARPES

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