TY - JOUR
T1 - Transient hot electron dynamics in single-layer TaS2
AU - Andreatta, Federico
AU - Rostami, Habib
AU - Grubišić Čabo, Antonija
AU - Bianchi, Marco
AU - E. Sanders, Charlotte
AU - Biswas, Deepnarayan
AU - Cacho, Cephise
AU - J. H. Jones, Alfred
AU - T. Chapman, Richard
AU - Springate, Emma
AU - King, Phil D. C.
AU - Miwa, Jill A.
AU - Balatsky, Alexander
AU - Ulstrup, Søren
AU - Hofmann, Philip
N1 - Authors gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant No. 15375) and the Centre of Excellence for Dirac Materials (Grant No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029, No. DFF-6108-00409, and No. DFF-4090-00125), the Aarhus University Research Foundation, The Leverhulme Trust and The Royal Society.
PY - 2019/4/16
Y1 - 2019/4/16
N2 - Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
AB - Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
UR - https://www.scopus.com/pages/publications/85065220949
U2 - 10.1103/PhysRevB.99.165421
DO - 10.1103/PhysRevB.99.165421
M3 - Article
SN - 1098-0121
VL - 99
JO - Physical Review. B, Condensed matter and materials physics
JF - Physical Review. B, Condensed matter and materials physics
M1 - 165421
ER -