Transient hot electron dynamics in single-layer TaS2

Federico  Andreatta; Habib  Rostami; Antonija Grubišić Čabo; Marco Bianchi; Charlotte  E. Sanders; Deepnarayan Biswas; Cephise  Cacho; Alfred J. H. Jones; Richard   T. Chapman; Emma Springate; Phil D. C. King; Jill A. Miwa; Alexander   Balatsky; Søren  Ulstrup; Philip Hofmann

doi:10.1103/PhysRevB.99.165421

Transient hot electron dynamics in single-layer TaS₂

Federico Andreatta, Habib Rostami, Antonija Grubišić Čabo, Marco Bianchi, Charlotte E. Sanders, Deepnarayan Biswas, Cephise Cacho, Alfred J. H. Jones, Richard T. Chapman, Emma Springate, Phil D. C. King, Jill A. Miwa, Alexander Balatsky, Søren Ulstrup, Philip Hofmann

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Abstract

Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS₂ in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.

Original language	English
Article number	165421
Journal	Physical Review. B, Condensed matter and materials physics
Volume	99
DOIs	https://doi.org/10.1103/PhysRevB.99.165421
Publication status	Published - 16 Apr 2019

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10.1103/PhysRevB.99.165421

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Copyright © 2019, American Physical Society. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1103/PhysRevB.99.165421
Accepted author manuscript, 3.1 MB

RS Phil King: Electronic Structure Engineering of Novel Topological Phases
King, P. (PI)
1/10/18 → 30/09/21
Project: Fellowship
Engineered Quantum States: Engineered quantum states via atmoic-scale assembly of artificial 2D heterostructures
King, P. (PI)
The Leverhulme Trust
1/08/17 → 31/07/22
Project: Standard
Philip Leverhulme Prize Award: Philip Leverhulme Prize Nomination
King, P. (PI)
The Leverhulme Trust
1/08/16 → 31/07/19
Project: Standard

Transient Hot Electron Dynamics in Single-Layer TaS2 (dataset)
Andreatta, F. (Creator), Rostami, H. (Creator), Grubišić Čabo, A. (Creator), Bianchi, M. (Creator), E. Sanders, C. (Creator), Biswas, D. (Creator), Cacho, C. (Creator), J. H. Jones, A. J. (Creator), Chapman, R. (Creator), Springate, E. (Creator), King, P. D. (Creator), Miwa, J. (Creator), Balatsky, A. (Creator), Ulstrup, S. (Creator) & Hofmann, P. (Creator), University of St Andrews, 22 Apr 2019
DOI: 10.17630/2e243434-d5c4-4c54-a722-e90000ff6008
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Cite this

Andreatta, F., Rostami, H., Grubišić Čabo, A., Bianchi, M., E. Sanders, C., Biswas, D., Cacho, C., J. H. Jones, A., T. Chapman, R., Springate, E., King, P. D. C., Miwa, J. A., Balatsky, A., Ulstrup, S., & Hofmann, P. (2019). Transient hot electron dynamics in single-layer TaS₂. Physical Review. B, Condensed matter and materials physics, 99, Article 165421. https://doi.org/10.1103/PhysRevB.99.165421

@article{c3f2eeafde08496db9a795e2263f89f2,

title = "Transient hot electron dynamics in single-layer TaS2",

abstract = "Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.",

author = "Federico Andreatta and Habib Rostami and {Grubi{\v s}i{\'c} {\v C}abo}, Antonija and Marco Bianchi and {E. Sanders}, Charlotte and Deepnarayan Biswas and Cephise Cacho and {J. H. Jones}, Alfred and {T. Chapman}, Richard and Emma Springate and King, {Phil D. C.} and Miwa, {Jill A.} and Alexander Balatsky and S{\o}ren Ulstrup and Philip Hofmann",

note = "Authors gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant No. 15375) and the Centre of Excellence for Dirac Materials (Grant No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029, No. DFF-6108-00409, and No. DFF-4090-00125), the Aarhus University Research Foundation, The Leverhulme Trust and The Royal Society. ",

year = "2019",

month = apr,

day = "16",

doi = "10.1103/PhysRevB.99.165421",

language = "English",

volume = "99",

journal = "Physical Review. B, Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

}

Andreatta, F, Rostami, H, Grubišić Čabo, A, Bianchi, M, E. Sanders, C, Biswas, D, Cacho, C, J. H. Jones, A, T. Chapman, R, Springate, E, King, PDC, Miwa, JA, Balatsky, A, Ulstrup, S & Hofmann, P 2019, 'Transient hot electron dynamics in single-layer TaS₂', Physical Review. B, Condensed matter and materials physics, vol. 99, 165421. https://doi.org/10.1103/PhysRevB.99.165421

TY - JOUR

T1 - Transient hot electron dynamics in single-layer TaS2

AU - Andreatta, Federico

AU - Rostami, Habib

AU - Grubišić Čabo, Antonija

AU - Bianchi, Marco

AU - E. Sanders, Charlotte

AU - Biswas, Deepnarayan

AU - Cacho, Cephise

AU - J. H. Jones, Alfred

AU - T. Chapman, Richard

AU - Springate, Emma

AU - King, Phil D. C.

AU - Miwa, Jill A.

AU - Balatsky, Alexander

AU - Ulstrup, Søren

AU - Hofmann, Philip

N1 - Authors gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant No. 15375) and the Centre of Excellence for Dirac Materials (Grant No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029, No. DFF-6108-00409, and No. DFF-4090-00125), the Aarhus University Research Foundation, The Leverhulme Trust and The Royal Society.

PY - 2019/4/16

Y1 - 2019/4/16

N2 - Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.

AB - Using time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.

U2 - 10.1103/PhysRevB.99.165421

DO - 10.1103/PhysRevB.99.165421

M3 - Article

SN - 1098-0121

VL - 99

JO - Physical Review. B, Condensed matter and materials physics

JF - Physical Review. B, Condensed matter and materials physics

M1 - 165421

ER -

Transient hot electron dynamics in single-layer TaS2

Abstract

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Projects

RS Phil King: Electronic Structure Engineering of Novel Topological Phases

Engineered Quantum States: Engineered quantum states via atmoic-scale assembly of artificial 2D heterostructures

Philip Leverhulme Prize Award: Philip Leverhulme Prize Nomination

Datasets

Transient Hot Electron Dynamics in Single-Layer TaS2 (dataset)

Cite this

Transient hot electron dynamics in single-layer TaS₂