Tracking dark excitons with exciton polaritons in semiconductor microcavities

D. Schmidt, B. Berger, M. Kahlert, M. Bayer, C. Schneider, Sven Höfling, E. S. Sedov, A. V. Kavokin, M. Aßmann

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


Dark excitons are of fundamental importance for a wide variety of processes in semiconductors but are difficult to investigate using optical techniques due to their weak interaction with light fields. We reveal and characterize dark excitons nonresonantly injected into a semiconductor microcavity structure containing InGaAs/GaAs quantum wells by a gated train of eight 100 fs pulses separated by 13 ns by monitoring their interactions with the bright lower polariton mode. We find a surprisingly long dark exciton lifetime of more than 20 ns, which is longer than the time delay between two consecutive pulses. This creates a memory effect that we clearly observe through the variation of the time-resolved transmission signal. We propose a rate equation model that provides a quantitative agreement with the experimental data.
Original languageEnglish
Article number047403
Number of pages6
JournalPhysical Review Letters
Issue number4
Early online date1 Feb 2019
Publication statusPublished - 1 Feb 2019


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