Toward Self-Assembled Ferroelectric Random Access Memories: Hard-Wired Switching Capacitor Arrays with Almost Tb/in.2 Densities

Paul R. Evans, XinHau Zhu, Paul Baxter, Mark McMillen, John McPhillips, Finlay D Morrison, James F. Scott, Robert J. Pollard, Robert M. Bowman, J. Marty Gregg

Research output: Contribution to journalArticlepeer-review

68 Citations (Scopus)

Abstract

We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.

Original languageEnglish
Pages (from-to)1134-1137
Number of pages4
JournalNano Letters
Volume7
Issue number5
DOIs
Publication statusPublished - May 2007

Keywords

  • PB(ZR0.2TI0.8)O-3 THIN-FILMS
  • WELL-ORDERED ARRAYS
  • PROBE MICROSCOPY
  • DOMAINS
  • NANOSTRUCTURES
  • ALUMINA

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