Time-resolved terahertz spectroscopy of black silicon

H. P. Porte; D. Turchinovich; P. Uhd Jepsen; S. Persheyev; Y. Fan; M. J. Rose

doi:10.1109/ICIMW.2010.5612535

Time-resolved terahertz spectroscopy of black silicon

H. P. Porte, D. Turchinovich, P. Uhd Jepsen, S. Persheyev, Y. Fan, M. J. Rose

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

Original language	English
Title of host publication	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide
Publisher	IEEE Computer Society
ISBN (Print)	9781424466573
DOIs	https://doi.org/10.1109/ICIMW.2010.5612535
Publication status	Published - 2010

Publication series

Name	IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

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10.1109/ICIMW.2010.5612535

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Porte, H. P., Turchinovich, D., Uhd Jepsen, P., Persheyev, S., Fan, Y., & Rose, M. J. (2010). Time-resolved terahertz spectroscopy of black silicon. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide Article 5612535 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). IEEE Computer Society. https://doi.org/10.1109/ICIMW.2010.5612535

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abstract = "The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.",

author = "Porte, {H. P.} and D. Turchinovich and {Uhd Jepsen}, P. and S. Persheyev and Y. Fan and Rose, {M. J.}",

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Porte, HP, Turchinovich, D, Uhd Jepsen, P, Persheyev, S, Fan, Y & Rose, MJ 2010, Time-resolved terahertz spectroscopy of black silicon. in IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide., 5612535, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, IEEE Computer Society. https://doi.org/10.1109/ICIMW.2010.5612535

Time-resolved terahertz spectroscopy of black silicon. / Porte, H. P.; Turchinovich, D.; Uhd Jepsen, P. et al.
IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. IEEE Computer Society, 2010. 5612535 (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Time-resolved terahertz spectroscopy of black silicon

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AU - Turchinovich, D.

AU - Uhd Jepsen, P.

AU - Persheyev, S.

AU - Fan, Y.

AU - Rose, M. J.

PY - 2010

Y1 - 2010

N2 - The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

AB - The ultrafast photoconductivity dynamics of black silicon is measured by time-resolved terahertz spectroscopy. Black silicon is produced by laser annealing of an a-Si:H film. We show that the decay time of the photoconductivity depends on the annealing method and fluence used in the production process.

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U2 - 10.1109/ICIMW.2010.5612535

DO - 10.1109/ICIMW.2010.5612535

M3 - Conference contribution

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SN - 9781424466573

T3 - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

BT - IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide

PB - IEEE Computer Society

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Porte HP, Turchinovich D, Uhd Jepsen P, Persheyev S, Fan Y, Rose MJ. Time-resolved terahertz spectroscopy of black silicon. In IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide. IEEE Computer Society. 2010. 5612535. (IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide). doi: 10.1109/ICIMW.2010.5612535

Time-resolved terahertz spectroscopy of black silicon

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