Thin films of CdTe/CdS grown by MOCVD for photovoltaics

R A Berrigan, N Maung, S J C Irvine, D J Cole-Hamilton, D Ellis

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)

Abstract

A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 degrees C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 degrees C, The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n-p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35-50%. (C) 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)718-724
Number of pages7
JournalJournal of Crystal Growth
Volume195
Issue number1-4
DOIs
Publication statusPublished - Dec 1998

Keywords

  • photovoltaic
  • metal organic chemical vapour deposition (MOCVD)
  • cadmium telluride
  • cadmium sulphide
  • doping
  • indium tin oxide
  • glass substrates
  • in situ monitoring:
  • SOLAR

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