Thin films of CdTe/CdS grown by MOCVD for photovoltaics

R A  Berrigan; N  Maung; S J C  Irvine; D J  Cole-Hamilton; D  Ellis

doi:10.1016/S0022-0248(98)00684-8

Thin films of CdTe/CdS grown by MOCVD for photovoltaics

R A Berrigan, N Maung, S J C Irvine, D J Cole-Hamilton, D Ellis

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 degrees C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 degrees C, The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n-p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35-50%. (C) 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	718-724
Number of pages	7
Journal	Journal of Crystal Growth
Volume	195
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(98)00684-8
Publication status	Published - Dec 1998

Keywords

photovoltaic
metal organic chemical vapour deposition (MOCVD)
cadmium telluride
cadmium sulphide
doping
indium tin oxide
glass substrates
in situ monitoring:
SOLAR

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0022-0248(98)00684-8

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title = "Thin films of CdTe/CdS grown by MOCVD for photovoltaics",

abstract = "A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 degrees C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 degrees C, The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n-p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35-50%. (C) 1998 Elsevier Science B.V. All rights reserved.",

keywords = "photovoltaic, metal organic chemical vapour deposition (MOCVD), cadmium telluride, cadmium sulphide, doping, indium tin oxide, glass substrates, in situ monitoring:, SOLAR",

author = "Berrigan, {R A} and N Maung and Irvine, {S J C} and Cole-Hamilton, {D J} and D Ellis",

year = "1998",

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doi = "10.1016/S0022-0248(98)00684-8",

language = "English",

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T1 - Thin films of CdTe/CdS grown by MOCVD for photovoltaics

AU - Berrigan, R A

AU - Maung, N

AU - Irvine, S J C

AU - Cole-Hamilton, D J

AU - Ellis, D

PY - 1998/12

Y1 - 1998/12

N2 - A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 degrees C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 degrees C, The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n-p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35-50%. (C) 1998 Elsevier Science B.V. All rights reserved.

AB - A doped CdTe/CdS photovoltaic structure has been grown onto ITO coated glass substrates by metal organic chemical vapour deposition (MOCVD). CdS is nucleated from dimethylcadmium and ditertiarybutylsulphide at 290 degrees C followed by CdTe growth from DMCd and diisopropyltelluride at 300-310 degrees C, The grain size of the CdTe is approximately the same as the underlying CdS layer and with a strongly prefered (1 1 1) orientation. This has been achieved without post growth annealing or chemical treatment. Similarly, doping of both the CdS and CdTe layer have been achieved during growth to form a n-p junction. The dopant precursors are n-butylchloride for the CdS layer and dimethylaminoarsenic for the CdTe layer. Preliminary photovoltaic devices show good rectification, with an open circuit voltage of 0.14 V, and fill factors of 35-50%. (C) 1998 Elsevier Science B.V. All rights reserved.

KW - photovoltaic

KW - metal organic chemical vapour deposition (MOCVD)

KW - cadmium telluride

KW - cadmium sulphide

KW - doping

KW - indium tin oxide

KW - glass substrates

KW - in situ monitoring:

KW - SOLAR

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DO - 10.1016/S0022-0248(98)00684-8

M3 - Article

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VL - 195

SP - 718

EP - 724

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Thin films of CdTe/CdS grown by MOCVD for photovoltaics

Abstract

Keywords

UN SDGs

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