Abstract
Using mixtures of aliovalent elements to achieve a valence balanced
electronic state is a rapidly emerging area in half-Heusler
thermoelectric materials research. Here, we report on Zn0.5Ti0.5NiSb, a combination of ZnNiSb and TiNiSb, which by adjusting the Zn/Ti-ratio can be made p- and n-type, achieving peak zT = 0.18 at 793 K and zT = 0.33 at 700 K, respectively. These promising values are underpinned by a low lattice thermal conductivity, κL = 2.7 W m−1 K−1 at 340 K, similar for all samples, decreasing to 1.25 W m−1 K−1 at 793 K. Transport data reveal similar weighted electronic mobilities for p- and n-type samples, suggesting similar zT
should be possible. For both polarities, a transition to degenerate
conduction is observed, superposed on intrinsic semiconducting behaviour
with a bandgap Eg = 0.4 eV. Neutron
and synchrotron X-ray diffraction experiments, including total
scattering, indicate the absence of interstitial metals and do not
reveal strong local structural variations. The absence of substantial
mass disorder and lattice strain points towards bond disorder as a
possible origin for the low κL. This
work describes a new materials system and provides further insight into
the impact of aliovalent alloying in the half-Heusler structure.
Original language | English |
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Pages (from-to) | 23566-23575 |
Number of pages | 10 |
Journal | Journal of Materials Chemistry A |
Volume | 11 |
Issue number | 43 |
Early online date | 12 Oct 2023 |
DOIs | |
Publication status | Published - 21 Nov 2023 |
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Dataset for Thermoelectric properties of the aliovalent half-Heusler alloy Zn0.5Ti0.5NiSb with intrinsic low thermal conductivity
Kennedy, B. (Creator), Kimber, S. (Creator), Checchia, S. (Creator), Shawon, A. (Creator), Zevalkink, A. (Creator), Suard, E. (Creator), Buckman, J. (Creator) & Bos, J.-W. G. (Creator), University of St Andrews, 6 Nov 2023
DOI: 10.17630/b9b0eaac-bd76-4ac9-8455-af7c1b735de1
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