There's no place like Ohm: conduction in oxide thin films

J. F. Scott*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

A pedagogical essay is given that alerts researchers to the errors inherent in assigning linear I(V) current-voltage dependences to Ohmic conduction. Such a linear I(V) is necessary but not sufficient, since other mechanisms, including Simmons' modification of the basic Schottky emission theory, also give linear I(V) at small applied voltages. Discrimination among Ohmic, Schottky, space-charge limited, and other models requires accurate thickness dependence I(d) data, where for Ohmic conduction I = a/d, whereas for interface-limited mechanisms such as Simmons/Schottky, I is nearly independent of d.

Original languageEnglish
Article number142202
Number of pages4
JournalJournal of Physics: Condensed Matter
Volume26
Issue number14
DOIs
Publication statusPublished - 9 Apr 2014

Keywords

  • ferroelectrics
  • thin films
  • dielectrics
  • conduction
  • LEAKAGE CURRENT
  • LIMITED CURRENT
  • MEMORIES
  • MECHANISM
  • ELECTRODES
  • CAPACITORS
  • CURRENTS
  • BIFEO3

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