The structural and optical characterization of high areal density GaxIn1-xP quantum dots on GaP

S. Gerhard; V. Baumann; Sven Höfling; A. Forchel

doi:10.1088/0957-4484/20/43/434016

The structural and optical characterization of high areal density GaxIn1-xP quantum dots on GaP

S. Gerhard^*, V. Baumann, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We present a study of the growth, morphology and optical properties of GaxIn1-xP quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

Original language	English
Article number	434016
Number of pages	5
Journal	Nanotechnology
Volume	20
Issue number	43
DOIs	https://doi.org/10.1088/0957-4484/20/43/434016
Publication status	Published - 28 Oct 2009

Keywords

GROWTH
SUBSTRATE
ISLANDS
LAYER

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10.1088/0957-4484/20/43/434016

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abstract = "We present a study of the growth, morphology and optical properties of GaxIn1-xP quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.",

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T1 - The structural and optical characterization of high areal density GaxIn1-xP quantum dots on GaP

AU - Gerhard, S.

AU - Baumann, V.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2009/10/28

Y1 - 2009/10/28

N2 - We present a study of the growth, morphology and optical properties of GaxIn1-xP quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

AB - We present a study of the growth, morphology and optical properties of GaxIn1-xP quantum dots (QDs) grown by molecular beam epitaxy (MBE) for various Ga concentrations x. QD areal densities up to 10(11) cm(-2) have been achieved showing strong dependence on the amount of gallium supplied. Structural properties are evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM) and are related to photoluminescence properties of the QDs. Both structural and optical properties are promising for future applications of the herein reported QDs in visible wavelength optoelectronic devices.

KW - GROWTH

KW - SUBSTRATE

KW - ISLANDS

KW - LAYER

U2 - 10.1088/0957-4484/20/43/434016

DO - 10.1088/0957-4484/20/43/434016

M3 - Article

SN - 0957-4484

VL - 20

JO - Nanotechnology

JF - Nanotechnology

IS - 43

M1 - 434016

ER -

The structural and optical characterization of high areal density GaxIn1-xP quantum dots on GaP

Abstract

Keywords

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