The role of crystallinity of the Nb2O5 blocking layer on the performance of dye-sensitized solar cells

Sankarapanicker Suresh, Thrithamarassery Gangadharan Deepak, Chengsheng Ni, Chandrasekharan Nair Omanaamma Sreekala, Malladi Satyanarayana, A. Sreekumaran Nair, Vellara Pappukkuty Pillai Mahadevan Pillai

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

The prevention of back electron transfer by inserting an energy barrier layer at the interface of a photo-anode is an effective method for improving the photovoltaic parameters in dye sensitised solar cells (DSSCs). In this study, phase a modified Nb2O5 blocking layer was inserted at the fluorine doped tin oxide (FTO)/TiO2 interface via a Rf magnetron sputtering process. For a critical tunnelling distance of -40 nm, the crystalline Nb2O5 blocking layer improved the efficiency close to 7% and outperformed the amorphous blocking layer by about 68%. The longer electron lifetime observed in DSSCs containing an inhomogeneous Nb2O5 layer indicates that trapping/de-trapping impedes the discharge of electrons to the TiO2 band edge. The origin of the longer electron lifetime is explained by formulating a theory from photovoltage decay measurements.
Original languageEnglish
Pages (from-to)6228-6237
JournalNew Journal of Chemistry
Volume40
Issue number7
Early online date2 May 2016
DOIs
Publication statusPublished - 1 Jul 2016

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