Using angle-resolved photoelectron spectroscopy, we compare the
electronic band structure of an ultrathin (1.8 nm) δ-layer of
boron-doped diamond with a bulk-like boron doped diamond film (3 μm).
Surprisingly, the measurements indicate that except for a small change
in the effective mass, there is no significant difference between the
electronic structure of these samples, irrespective of their physical
dimensionality, except for a small modification of the effective mass.
While this suggests that, at the current time, it is not possible to
fabricate boron-doped diamond structures with quantum properties, it
also means that nanoscale boron doped diamond structures can be
fabricated which retain the classical electronic properties of
bulk-doped diamond, without a need to consider the influence of quantum