The occupied electronic structure of ultrathin boron doped diamond

A. C. Pakpour-Tabrizi, A. K. Schenk, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J.E. Butler, A. Vikharev, J. A. Miwa, Ph Hofmann, S. P. Cooil, J. W. Wells*, F. Mazzola

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
Original languageEnglish
Pages (from-to)1358–1364
Number of pages7
JournalNanoscale Advances
Issue number3
Early online date24 Feb 2020
Publication statusPublished - 1 Mar 2020


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