The occupied electronic structure of ultrathin boron doped diamond

A. C. Pakpour-Tabrizi; A. K. Schenk; A. J. U. Holt; S. K. Mahatha; F. Arnold; M. Bianchi; R. B. Jackman; J.E. Butler; A. Vikharev; J. A. Miwa; Ph Hofmann; S. P. Cooil; J. W. Wells; F. Mazzola

doi:10.1039/c9na00593e

The occupied electronic structure of ultrathin boron doped diamond

A. C. Pakpour-Tabrizi, A. K. Schenk, A. J. U. Holt, S. K. Mahatha, F. Arnold, M. Bianchi, R. B. Jackman, J.E. Butler, A. Vikharev, J. A. Miwa, Ph Hofmann, S. P. Cooil, J. W. Wells^*, F. Mazzola

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

Original language	English
Pages (from-to)	1358–1364
Number of pages	7
Journal	Nanoscale Advances
Volume	2
Issue number	3
Early online date	24 Feb 2020
DOIs	https://doi.org/10.1039/c9na00593e
Publication status	Published - 1 Mar 2020

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Cite this

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title = "The occupied electronic structure of ultrathin boron doped diamond",

abstract = "Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.",

author = "Pakpour-Tabrizi, {A. C.} and Schenk, {A. K.} and Holt, {A. J. U.} and Mahatha, {S. K.} and F. Arnold and M. Bianchi and Jackman, {R. B.} and J.E. Butler and A. Vikharev and Miwa, {J. A.} and Ph Hofmann and Cooil, {S. P.} and Wells, {J. W.} and F. Mazzola",

note = "Funding: RBJ acknowledges the UK's Engineering and Physical Sciences Research Council (EPSRC) for partial funding for this activity (EP/H020055/1) as well as The EC's Horizon 2020 Programme for support from the “GREENDIAMOND” project (ID: 640947). This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, “QuSpin”, and through the Fripro program, Project No. 250985 “FunTopoMat” and 262339 “NEAT”. This work was supported by the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029 and DFF-6108-00409) and by VILLUM FONDEN via the Centre of Excellence for Dirac Materials (Grant No. 11744) and the Aarhus University Research Foundation. ",

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doi = "10.1039/c9na00593e",

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AU - Pakpour-Tabrizi, A. C.

AU - Schenk, A. K.

AU - Holt, A. J. U.

AU - Mahatha, S. K.

AU - Arnold, F.

AU - Bianchi, M.

AU - Jackman, R. B.

AU - Butler, J.E.

AU - Vikharev, A.

AU - Miwa, J. A.

AU - Hofmann, Ph

AU - Cooil, S. P.

AU - Wells, J. W.

AU - Mazzola, F.

N1 - Funding: RBJ acknowledges the UK's Engineering and Physical Sciences Research Council (EPSRC) for partial funding for this activity (EP/H020055/1) as well as The EC's Horizon 2020 Programme for support from the “GREENDIAMOND” project (ID: 640947). This work was supported by the Research Council of Norway through its Centres of Excellence funding scheme, Project No. 262633, “QuSpin”, and through the Fripro program, Project No. 250985 “FunTopoMat” and 262339 “NEAT”. This work was supported by the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029 and DFF-6108-00409) and by VILLUM FONDEN via the Centre of Excellence for Dirac Materials (Grant No. 11744) and the Aarhus University Research Foundation.

PY - 2020/3/1

Y1 - 2020/3/1

N2 - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

AB - Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.

UR - http://www.rsc.org/suppdata/c9/na/c9na00593e/c9na00593e1.pdf

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VL - 2

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JO - Nanoscale Advances

JF - Nanoscale Advances

IS - 3

ER -

The occupied electronic structure of ultrathin boron doped diamond

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