Abstract
The core-level lineshape in photoemission spectra of InN is studied by high-resolution X-ray photoemission spectroscopy. The In 3d and N 1s core-levels are asymmetric, displaying a high binding energy tail which is attributed to inelastic losses to and/or screening by conduction band plasmons in the accumulation layer present at InN surfaces. The extent of the asymmetric tail decreases with decreasing surface Fermi level position associated with a lower density of electrons in the accumulation layer. (C) 2008 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 871-875 |
Number of pages | 5 |
Journal | Surface Science |
Volume | 602 |
Issue number | 4 |
DOIs | |
Publication status | Published - 15 Feb 2008 |
Keywords
- indium nitride
- X-ray photoelectron spectroscopy
- conduction band plasmon
- core-level lineshape
- electron accumulation
- X-RAY PHOTOEMISSION
- BV SEMICONDUCTOR SURFACES
- MOLECULAR-BEAM EPITAXY
- SB-DOPED SNO2
- NONPOLAR SURFACES
- SPECTROSCOPY
- NITRIDATION
- POLAR
- ACCUMULATION
- SCATTERING