The influence of conduction band plasmons on core-level photoemission spectra of InN

P. D. C. King, T. D. Veal, Hai Lu, S. A. Hatfield, W. J. Schaff, C. F. McConville

Research output: Contribution to journalArticlepeer-review

Abstract

The core-level lineshape in photoemission spectra of InN is studied by high-resolution X-ray photoemission spectroscopy. The In 3d and N 1s core-levels are asymmetric, displaying a high binding energy tail which is attributed to inelastic losses to and/or screening by conduction band plasmons in the accumulation layer present at InN surfaces. The extent of the asymmetric tail decreases with decreasing surface Fermi level position associated with a lower density of electrons in the accumulation layer. (C) 2008 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)871-875
Number of pages5
JournalSurface Science
Volume602
Issue number4
DOIs
Publication statusPublished - 15 Feb 2008

Keywords

  • indium nitride
  • X-ray photoelectron spectroscopy
  • conduction band plasmon
  • core-level lineshape
  • electron accumulation
  • X-RAY PHOTOEMISSION
  • BV SEMICONDUCTOR SURFACES
  • MOLECULAR-BEAM EPITAXY
  • SB-DOPED SNO2
  • NONPOLAR SURFACES
  • SPECTROSCOPY
  • NITRIDATION
  • POLAR
  • ACCUMULATION
  • SCATTERING

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