The impact of p-doping on the static and dynamic properties of 1.5 mu m quantum dash lasers on InP

S. Hein; V. von Hinten; Sven Höfling; A. Forchel

doi:10.1063/1.2830020

The impact of p-doping on the static and dynamic properties of 1.5 mu m quantum dash lasers on InP

S. Hein^*, V. von Hinten, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

p-type modulation doping in the range of 0-100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash. (c) 2008 American Institute of Physics.

Original language	English
Article number	011120
Number of pages	3
Journal	Applied Physics Letters
Volume	92
Issue number	1
DOIs	https://doi.org/10.1063/1.2830020
Publication status	Published - 7 Jan 2008

Keywords

DOT LASERS
MODULATION CHARACTERISTICS
SEMICONDUCTOR-LASERS
OPTICAL AMPLIFIERS
HIGH-SPEED
GAIN
LINEWIDTH

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title = "The impact of p-doping on the static and dynamic properties of 1.5 mu m quantum dash lasers on InP",

abstract = "p-type modulation doping in the range of 0-100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash. (c) 2008 American Institute of Physics.",

keywords = "DOT LASERS, MODULATION CHARACTERISTICS, SEMICONDUCTOR-LASERS, OPTICAL AMPLIFIERS, HIGH-SPEED, GAIN, LINEWIDTH",

author = "S. Hein and {von Hinten}, V. and Sven H{\"o}fling and A. Forchel",

year = "2008",

month = jan,

day = "7",

doi = "10.1063/1.2830020",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

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TY - JOUR

T1 - The impact of p-doping on the static and dynamic properties of 1.5 mu m quantum dash lasers on InP

AU - Hein, S.

AU - von Hinten, V.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2008/1/7

Y1 - 2008/1/7

N2 - p-type modulation doping in the range of 0-100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash. (c) 2008 American Institute of Physics.

AB - p-type modulation doping in the range of 0-100 acceptors per quantum dash (QDash) has been carried out to investigate the impact on QDash lasers on (100) InP. The differential gain was found to increase more than 50% for doping concentrations of 50 acceptors per QDash for constant cavity length lasers. However, this benefit is overcompensated by enhanced gain compression and enlarged thermal heating due to high internal losses in highly p-doped devices. The maximum modulation bandwidth of 8 GHz in continuous wave operation at room temperature is, therefore, obtained for a moderate p-doping level of 10 holes per QDash. (c) 2008 American Institute of Physics.

KW - DOT LASERS

KW - MODULATION CHARACTERISTICS

KW - SEMICONDUCTOR-LASERS

KW - OPTICAL AMPLIFIERS

KW - HIGH-SPEED

KW - GAIN

KW - LINEWIDTH

U2 - 10.1063/1.2830020

DO - 10.1063/1.2830020

M3 - Article

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 011120

ER -

The impact of p-doping on the static and dynamic properties of 1.5 mu m quantum dash lasers on InP

Abstract

Keywords

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