The effect of photo-oxidation on the sticking and reactivity of Ag on amorphous GeS2

J. Hugh Horton; Christopher Hardacre; Christopher J. Baddeley; Geoffrey D. Moggridge; R. Mark Ormerod; Richard M. Lambert

doi:10.1088/0953-8984/8/6/011

The effect of photo-oxidation on the sticking and reactivity of Ag on amorphous GeS₂

J. Hugh Horton, Christopher Hardacre, Christopher J. Baddeley, Geoffrey D. Moggridge, R. Mark Ormerod, Richard M. Lambert^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Photo-oxidation of amorphous GeS₂ films illuminated by band-gap radiation drastically alters the growth mode and reactivity of subsequently deposited Ag. In the former case (monolayer/simultaneous multilayer growth) the Ag reacts with both Ge and S sites. In the latter case (Stranski-Krastanov growth) Ge sites are selectively oxidized and film growth proceeds by Ag nucleation at the unoxidized S sites. The behaviour is very different from that reported earlier for Zn deposition on GeS2, where photo-oxidation results in very large changes in metal sticking probability. XPS, XAES and EXAFS data provide the basis for understanding both this phenomenon and the very different photodiffusion behaviour of Zn and Ag in GeS₂.

Original language	English
Pages (from-to)	707-718
Number of pages	12
Journal	Journal of Physics Condensed Matter
Volume	8
Issue number	6
DOIs	https://doi.org/10.1088/0953-8984/8/6/011
Publication status	Published - 5 Feb 1996

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title = "The effect of photo-oxidation on the sticking and reactivity of Ag on amorphous GeS2",

abstract = "Photo-oxidation of amorphous GeS2 films illuminated by band-gap radiation drastically alters the growth mode and reactivity of subsequently deposited Ag. In the former case (monolayer/simultaneous multilayer growth) the Ag reacts with both Ge and S sites. In the latter case (Stranski-Krastanov growth) Ge sites are selectively oxidized and film growth proceeds by Ag nucleation at the unoxidized S sites. The behaviour is very different from that reported earlier for Zn deposition on GeS2, where photo-oxidation results in very large changes in metal sticking probability. XPS, XAES and EXAFS data provide the basis for understanding both this phenomenon and the very different photodiffusion behaviour of Zn and Ag in GeS2.",

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AU - Horton, J. Hugh

AU - Hardacre, Christopher

AU - Baddeley, Christopher J.

AU - Moggridge, Geoffrey D.

AU - Ormerod, R. Mark

AU - Lambert, Richard M.

PY - 1996/2/5

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N2 - Photo-oxidation of amorphous GeS2 films illuminated by band-gap radiation drastically alters the growth mode and reactivity of subsequently deposited Ag. In the former case (monolayer/simultaneous multilayer growth) the Ag reacts with both Ge and S sites. In the latter case (Stranski-Krastanov growth) Ge sites are selectively oxidized and film growth proceeds by Ag nucleation at the unoxidized S sites. The behaviour is very different from that reported earlier for Zn deposition on GeS2, where photo-oxidation results in very large changes in metal sticking probability. XPS, XAES and EXAFS data provide the basis for understanding both this phenomenon and the very different photodiffusion behaviour of Zn and Ag in GeS2.

AB - Photo-oxidation of amorphous GeS2 films illuminated by band-gap radiation drastically alters the growth mode and reactivity of subsequently deposited Ag. In the former case (monolayer/simultaneous multilayer growth) the Ag reacts with both Ge and S sites. In the latter case (Stranski-Krastanov growth) Ge sites are selectively oxidized and film growth proceeds by Ag nucleation at the unoxidized S sites. The behaviour is very different from that reported earlier for Zn deposition on GeS2, where photo-oxidation results in very large changes in metal sticking probability. XPS, XAES and EXAFS data provide the basis for understanding both this phenomenon and the very different photodiffusion behaviour of Zn and Ag in GeS2.

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The effect of photo-oxidation on the sticking and reactivity of Ag on amorphous GeS₂

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