The E3 Defect in Mg (x) Zn1-x O

H. von Wenckstern; K. Brachwitz; M. Schmidt; C. P. Dietrich; M. Ellguth; M. Stoelzel; M. Lorenz; M. Grundmann

doi:10.1007/s11664-009-0967-0

The E3 Defect in Mg (x) Zn1-x O

H. von Wenckstern^*
, K. Brachwitz
, M. Schmidt
, C. P. Dietrich
, M. Ellguth
, M. Stoelzel
, M. Lorenz
, M. Grundmann

^*Corresponding author for this work

School of Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

The authors used highly rectifying PdO (y) /Mg (x) Zn1-x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg (x) Zn1-x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x <0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.

Original language	English
Pages (from-to)	584-588
Number of pages	5
Journal	Journal of Electronic Materials
Volume	39
Issue number	5
DOIs	https://doi.org/10.1007/s11664-009-0967-0
Publication status	Published - May 2010

Keywords

MgZnO
pulsed-laser deposition
Schottky barrier diode
thermal admittance spectroscopy
deep-level transient spectroscopy
E3 defect
photoluminescence
ZNO THIN-FILMS
PULSED-LASER DEPOSITION
ELECTRICAL CHARACTERIZATION
DIELECTRIC FUNCTIONS
SCHOTTKY CONTACTS
MGXZN1-XO
ALLOY
PD

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title = "The E3 Defect in Mg (x) Zn1-x O",

abstract = "The authors used highly rectifying PdO (y) /Mg (x) Zn1-x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg (x) Zn1-x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x <0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.",

keywords = "MgZnO, pulsed-laser deposition, Schottky barrier diode, thermal admittance spectroscopy, deep-level transient spectroscopy, E3 defect, photoluminescence, ZNO THIN-FILMS, PULSED-LASER DEPOSITION, ELECTRICAL CHARACTERIZATION, DIELECTRIC FUNCTIONS, SCHOTTKY CONTACTS, MGXZN1-XO, ALLOY, PD",

author = "\{von Wenckstern\}, H. and K. Brachwitz and M. Schmidt and Dietrich, \{C. P.\} and M. Ellguth and M. Stoelzel and M. Lorenz and M. Grundmann",

year = "2010",

month = may,

doi = "10.1007/s11664-009-0967-0",

language = "English",

volume = "39",

pages = "584--588",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

number = "5",

}

TY - JOUR

T1 - The E3 Defect in Mg (x) Zn1-x O

AU - von Wenckstern, H.

AU - Brachwitz, K.

AU - Schmidt, M.

AU - Dietrich, C. P.

AU - Ellguth, M.

AU - Stoelzel, M.

AU - Lorenz, M.

AU - Grundmann, M.

PY - 2010/5

Y1 - 2010/5

N2 - The authors used highly rectifying PdO (y) /Mg (x) Zn1-x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg (x) Zn1-x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x <0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.

AB - The authors used highly rectifying PdO (y) /Mg (x) Zn1-x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg (x) Zn1-x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x <0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.

KW - MgZnO

KW - pulsed-laser deposition

KW - Schottky barrier diode

KW - thermal admittance spectroscopy

KW - deep-level transient spectroscopy

KW - E3 defect

KW - photoluminescence

KW - ZNO THIN-FILMS

KW - PULSED-LASER DEPOSITION

KW - ELECTRICAL CHARACTERIZATION

KW - DIELECTRIC FUNCTIONS

KW - SCHOTTKY CONTACTS

KW - MGXZN1-XO

KW - ALLOY

KW - PD

U2 - 10.1007/s11664-009-0967-0

DO - 10.1007/s11664-009-0967-0

M3 - Article

SN - 0361-5235

VL - 39

SP - 584

EP - 588

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

The E3 Defect in Mg (x) Zn1-x O

Abstract

Keywords

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