The E3 Defect in Mg (x) Zn1-x O

H. von Wenckstern*, K. Brachwitz, M. Schmidt, C. P. Dietrich, M. Ellguth, M. Stoelzel, M. Lorenz, M. Grundmann

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The authors used highly rectifying PdO (y) /Mg (x) Zn1-x O Schottky barriers to determine the apparent capture cross-section and the thermal activation energy of the E3 defect in Mg (x) Zn1-x O thin films by thermal admittance spectroscopy and deep-level transient spectroscopy for x <0.08. The samples were grown by pulsed-laser deposition. It is observed that both the apparent capture cross-section and the thermal activation energy increase with increasing Mg mole fraction.

Original languageEnglish
Pages (from-to)584-588
Number of pages5
JournalJournal of Electronic Materials
Volume39
Issue number5
DOIs
Publication statusPublished - May 2010

Keywords

  • MgZnO
  • pulsed-laser deposition
  • Schottky barrier diode
  • thermal admittance spectroscopy
  • deep-level transient spectroscopy
  • E3 defect
  • photoluminescence
  • ZNO THIN-FILMS
  • PULSED-LASER DEPOSITION
  • ELECTRICAL CHARACTERIZATION
  • DIELECTRIC FUNCTIONS
  • SCHOTTKY CONTACTS
  • MGXZN1-XO
  • ALLOY
  • PD

Fingerprint

Dive into the research topics of 'The E3 Defect in Mg (x) Zn1-x O'. Together they form a unique fingerprint.

Cite this