Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang, Y. Li, J. Murray, A. S. Bunting, S. Smith, C. C. Dunare, J. T.M. Stevenson, M. P. Desmulliez, A. J. Walton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5%1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mω using the Kelvin contact resistance structures.

Original languageEnglish
Title of host publication2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
Pages37-42
Number of pages6
DOIs
Publication statusPublished - 9 Aug 2013
Event2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan
Duration: 25 Mar 201328 Mar 2013

Conference

Conference2013 International Conference on Microelectronic Test Structures, ICMTS 2013
Country/TerritoryJapan
CityOsaka
Period25/03/1328/03/13

Keywords

  • Daisy chain
  • electroplating
  • Kelvin structure
  • photoresist CMP
  • TSV

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