Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang; Y. Li; J. Murray; A. S. Bunting; S. Smith; C. C. Dunare; J. T.M. Stevenson; M. P. Desmulliez; A. J. Walton

doi:10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

R. Zhang, Y. Li, J. Murray, A. S. Bunting, S. Smith, C. C. Dunare, J. T.M. Stevenson, M. P. Desmulliez, A. J. Walton

School of Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5%1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mω using the Kelvin contact resistance structures.

Original language	English
Title of host publication	2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings
Pages	37-42
Number of pages	6
DOIs	https://doi.org/10.1109/ICMTS.2013.6528142
Publication status	Published - 9 Aug 2013
Event	2013 International Conference on Microelectronic Test Structures, ICMTS 2013 - Osaka, Japan Duration: 25 Mar 2013 → 28 Mar 2013

Conference

Conference	2013 International Conference on Microelectronic Test Structures, ICMTS 2013
Country/Territory	Japan
City	Osaka
Period	25/03/13 → 28/03/13

Keywords

Daisy chain
electroplating
Kelvin structure
photoresist CMP
TSV

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10.1109/ICMTS.2013.6528142

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Zhang, R., Li, Y., Murray, J., Bunting, A. S., Smith, S., Dunare, C. C., Stevenson, J. T. M., Desmulliez, M. P., & Walton, A. J. (2013). Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. In 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings (pp. 37-42). Article 6528142 https://doi.org/10.1109/ICMTS.2013.6528142

@inproceedings{7ef8af1415eb43be8c6146c6109e3662,

title = "Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist",

abstract = "An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5%1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mω using the Kelvin contact resistance structures.",

keywords = "Daisy chain, electroplating, Kelvin structure, photoresist CMP, TSV",

author = "R. Zhang and Y. Li and J. Murray and Bunting, {A. S.} and S. Smith and Dunare, {C. C.} and Stevenson, {J. T.M.} and Desmulliez, {M. P.} and Walton, {A. J.}",

year = "2013",

month = aug,

day = "9",

doi = "10.1109/ICMTS.2013.6528142",

language = "English",

isbn = "9781467348485",

pages = "37--42",

booktitle = "2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings",

note = "2013 International Conference on Microelectronic Test Structures, ICMTS 2013 ; Conference date: 25-03-2013 Through 28-03-2013",

}

Zhang, R, Li, Y, Murray, J, Bunting, AS, Smith, S, Dunare, CC, Stevenson, JTM, Desmulliez, MP & Walton, AJ 2013, Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. in 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings., 6528142, pp. 37-42, 2013 International Conference on Microelectronic Test Structures, ICMTS 2013, Osaka, Japan, 25/03/13. https://doi.org/10.1109/ICMTS.2013.6528142

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist. / Zhang, R.; Li, Y.; Murray, J. et al.
2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings. 2013. p. 37-42 6528142.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

AU - Zhang, R.

AU - Li, Y.

AU - Murray, J.

AU - Bunting, A. S.

AU - Smith, S.

AU - Dunare, C. C.

AU - Stevenson, J. T.M.

AU - Desmulliez, M. P.

AU - Walton, A. J.

PY - 2013/8/9

Y1 - 2013/8/9

N2 - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5%1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mω using the Kelvin contact resistance structures.

AB - An improved bottom-up electroplating technique has been successfully developed for the fabrication of TSV arrays with 9.5%1 aspect ratios. 125,500 TSVs have been fabricated in an area of 6×6 cm with a horizontal and vertical pitch of 240 μm. A method of visually inspecting the via yield is presented, and Kelvin test structures and contact chain test structures have been fabricated to electrically evaluate single and multiple TSVs respectively. The average resistance of the Cu vias was measured as of 9.1 mω using the Kelvin contact resistance structures.

KW - Daisy chain

KW - electroplating

KW - Kelvin structure

KW - photoresist CMP

KW - TSV

UR - http://www.scopus.com/inward/record.url?scp=84881110046&partnerID=8YFLogxK

U2 - 10.1109/ICMTS.2013.6528142

DO - 10.1109/ICMTS.2013.6528142

M3 - Conference contribution

AN - SCOPUS:84881110046

SN - 9781467348485

SP - 37

EP - 42

BT - 2013 IEEE International Conference on Microelectronic Test Structures, ICMTS 2013 - Conference Proceedings

T2 - 2013 International Conference on Microelectronic Test Structures, ICMTS 2013

Y2 - 25 March 2013 through 28 March 2013

ER -

Test structures for electrical evaluation of high aspect ratio TSV arrays fabricated using planarised sacrificial photoresist

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Keywords

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