Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Jun Jiang, Zi Long Bai, Zhi Hui Chen, Long He, David Wei Zhang, Qing Hua Zhang, Jin An Shi, Min Hyuk Park, James Floyd Scott, Cheol Seong Hwang, An Quan Jiang

Research output: Contribution to journalArticlepeer-review

193 Citations (Scopus)

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