Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

T. Braun; C. Schneider; S. Maier; R. Igusa; S. Iwamoto; A. Forchel; S. Hoefling; Y. Arakawa; M. Kamp

doi:10.1063/1.4896284

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

T. Braun, C. Schneider, S. Maier, R. Igusa, S. Iwamoto, A. Forchel, S. Hoefling^*, Y. Arakawa, M. Kamp

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

Original language	English
Article number	097128
Number of pages	5
Journal	AIP Advances
Volume	4
Issue number	9
DOIs	https://doi.org/10.1063/1.4896284
Publication status	Published - 19 Sept 2014

Keywords

GAAS

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10.1063/1.4896284

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© 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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title = "Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots",

abstract = "In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches. ",

keywords = "GAAS",

author = "T. Braun and C. Schneider and S. Maier and R. Igusa and S. Iwamoto and A. Forchel and S. Hoefling and Y. Arakawa and M. Kamp",

note = "The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the Deutsche Forschungsgemeinschaft (DFG) and the Japan Science and Technology Agency (JST) (project {\textquoteleft}single quantum dot lasers{\textquoteright}).",

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month = sep,

day = "19",

doi = "10.1063/1.4896284",

language = "English",

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journal = "AIP Advances",

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T1 - Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

AU - Braun, T.

AU - Schneider, C.

AU - Maier, S.

AU - Igusa, R.

AU - Iwamoto, S.

AU - Forchel, A.

AU - Hoefling, S.

AU - Arakawa, Y.

AU - Kamp, M.

N1 - The authors gratefully acknowledge funding by the state of Bavaria and the bilateral project of the Deutsche Forschungsgemeinschaft (DFG) and the Japan Science and Technology Agency (JST) (project ‘single quantum dot lasers’).

PY - 2014/9/19

Y1 - 2014/9/19

N2 - In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

AB - In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

KW - GAAS

U2 - 10.1063/1.4896284

DO - 10.1063/1.4896284

M3 - Article

SN - 2158-3226

VL - 4

JO - AIP Advances

JF - AIP Advances

IS - 9

M1 - 097128

ER -

Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

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