Temperature dependency of resonance fluorescence from InAs/GaAs quantum dots: dephasing mechanisms

Joanna M. Zajac, Sigurdur I. Erlingsson

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We combined spectral and temporal measurements in order to identify sources of dephasing. In the spectral domain, we observed temperature-dependent broadening of the zero-phonon line as 0.3 μeV/K, and a temperature-dependent phonon broadband. Time-resolved autocorrelation measurements revealed temperature-dependent spin pumping times between T1,s = 6 ns (4 K) and 0.5 ns (15 K). These results are compared against theoretical modeling with a master equation for a four-level system coupled to phonon and spin baths. We explained the results by phonon-mediated hole-spin scattering between two excited states, with the piezophonons as a dominant mechanism.

Original languageEnglish
Article number035432
Number of pages7
JournalPhysical Review. B, Condensed matter and materials physics
Volume94
Issue number3
DOIs
Publication statusPublished - 20 Jul 2016

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