Temperature dependence of pulsed polariton lasing in a GaAs microcavity

Jean-Sebastian Tempel; Franziska Veit; Marc Assmann; Lars Erik Kreilkamp; Sven Höfling; Martin Kamp; Alfred Forchel; Manfred Bayer

doi:10.1088/1367-2630/14/8/083014

Temperature dependence of pulsed polariton lasing in a GaAs microcavity

Jean-Sebastian Tempel^*, Franziska Veit, Marc Assmann, Lars Erik Kreilkamp, Sven Höfling, Martin Kamp, Alfred Forchel, Manfred Bayer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.

Original language	English
Article number	083014
Number of pages	12
Journal	New Journal of Physics
Volume	14
DOIs	https://doi.org/10.1088/1367-2630/14/8/083014
Publication status	Published - 14 Aug 2012

Keywords

Semiconductor microactivity
Quantized vortices
Cavity polaritons
Room temperature
Excitons
Time

Access to Document

10.1088/1367-2630/14/8/083014

083014
© 2012 IOP Publishing and Deutsche Physikalische Gesellschaft. Jean-Sebastian Tempel et al 2012 New J. Phys. 14 083014. Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Final published version, 1.07 MB

Cite this

@article{f09bccbe6d844cc58d6f419971082fc1,

title = "Temperature dependence of pulsed polariton lasing in a GaAs microcavity",

abstract = "The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.",

keywords = "Semiconductor microactivity, Quantized vortices, Cavity polaritons, Room temperature, Excitons, Time",

author = "Jean-Sebastian Tempel and Franziska Veit and Marc Assmann and Kreilkamp, {Lars Erik} and Sven H{\"o}fling and Martin Kamp and Alfred Forchel and Manfred Bayer",

year = "2012",

month = aug,

day = "14",

doi = "10.1088/1367-2630/14/8/083014",

language = "English",

volume = "14",

journal = "New Journal of Physics",

issn = "1367-2630",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Temperature dependence of pulsed polariton lasing in a GaAs microcavity

AU - Tempel, Jean-Sebastian

AU - Veit, Franziska

AU - Assmann, Marc

AU - Kreilkamp, Lars Erik

AU - Höfling, Sven

AU - Kamp, Martin

AU - Forchel, Alfred

AU - Bayer, Manfred

PY - 2012/8/14

Y1 - 2012/8/14

N2 - The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.

AB - The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.

KW - Semiconductor microactivity

KW - Quantized vortices

KW - Cavity polaritons

KW - Room temperature

KW - Excitons

KW - Time

U2 - 10.1088/1367-2630/14/8/083014

DO - 10.1088/1367-2630/14/8/083014

M3 - Article

SN - 1367-2630

VL - 14

JO - New Journal of Physics

JF - New Journal of Physics

M1 - 083014

ER -

Temperature dependence of pulsed polariton lasing in a GaAs microcavity

Abstract

Keywords

Access to Document

Fingerprint

Cite this