Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities

Tomoyuki Horikiri*, Yasuhiro Matsuo, Yutaka Shikano, Andreas Loeffler, Sven Höfling, Alfred Forchel, Yoshihisa Yamamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


Observations of polariton condensation in semiconductor microcavities suggest that polaritons can be exploited as a novel type of laser with low input-power requirements. The low-excitation regime is approximately equivalent to thermal equilibrium, and a higher excitation results in more dominant nonequilibrium features. Although standard photon lasing has been experimentally observed in the high excitation regime, e-h pair binding can still remain even in the high-excitation regime theoretically. Therefore, the photoluminescence with a different photon lasing mechanism is predicted to be different from that with a standard photon lasing. In this paper, we report the temperature dependence of the change in photoluminescence with the excitation density. The second threshold behavior transited to the standard photon lasing is not measured at a low-temperature, high-excitation power regime. Our results suggest that there may still be an electron-hole pair at this regime to give a different photon lasing mechanism.

Original languageEnglish
Article number084709
Number of pages10
JournalJournal of the Physical Society of Japan
Issue number8
Publication statusPublished - Aug 2013


  • polariton
  • photon lasing
  • semiconductor
  • microcavity
  • Bose-Einstein condensation


Dive into the research topics of 'Temperature Dependence of Highly Excited Exciton Polaritons in Semiconductor Microcavities'. Together they form a unique fingerprint.

Cite this