Tailoring of morphology and emission wavelength of AlGaInAs quantum dots

T. W. Schlereth; C. Schneider; Sven Höfling; A. Forchel

doi:10.1088/0957-4484/19/04/045601

Tailoring of morphology and emission wavelength of AlGaInAs quantum dots

T. W. Schlereth^*, C. Schneider, Sven Höfling, A. Forchel

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We present a study of the growth, morphology and optical properties of Al(x)Ga(1-x-y)In(y)As quantum dots (QDs) for a wide range of Al and In concentrations (0

Original language	English
Article number	045601
Number of pages	5
Journal	Nanotechnology
Volume	19
Issue number	4
DOIs	https://doi.org/10.1088/0957-4484/19/04/045601
Publication status	Published - 30 Jan 2008

Keywords

OPTICAL-PROPERTIES
MU-M
EPITAXY
TEMPERATURE
GAAS(100)
SUBSTRATE
STRAIN
LASERS
LAYER
GAAS

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10.1088/0957-4484/19/04/045601

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title = "Tailoring of morphology and emission wavelength of AlGaInAs quantum dots",

abstract = "We present a study of the growth, morphology and optical properties of Al(x)Ga(1-x-y)In(y)As quantum dots (QDs) for a wide range of Al and In concentrations (0 ",

keywords = "OPTICAL-PROPERTIES, MU-M, EPITAXY, TEMPERATURE, GAAS(100), SUBSTRATE, STRAIN, LASERS, LAYER, GAAS",

author = "Schlereth, {T. W.} and C. Schneider and Sven H{\"o}fling and A. Forchel",

year = "2008",

month = jan,

day = "30",

doi = "10.1088/0957-4484/19/04/045601",

language = "English",

volume = "19",

journal = "Nanotechnology",

issn = "0957-4484",

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TY - JOUR

T1 - Tailoring of morphology and emission wavelength of AlGaInAs quantum dots

AU - Schlereth, T. W.

AU - Schneider, C.

AU - Höfling, Sven

AU - Forchel, A.

PY - 2008/1/30

Y1 - 2008/1/30

N2 - We present a study of the growth, morphology and optical properties of Al(x)Ga(1-x-y)In(y)As quantum dots (QDs) for a wide range of Al and In concentrations (0

AB - We present a study of the growth, morphology and optical properties of Al(x)Ga(1-x-y)In(y)As quantum dots (QDs) for a wide range of Al and In concentrations (0

KW - OPTICAL-PROPERTIES

KW - MU-M

KW - EPITAXY

KW - TEMPERATURE

KW - GAAS(100)

KW - SUBSTRATE

KW - STRAIN

KW - LASERS

KW - LAYER

KW - GAAS

U2 - 10.1088/0957-4484/19/04/045601

DO - 10.1088/0957-4484/19/04/045601

M3 - Article

SN - 0957-4484

VL - 19

JO - Nanotechnology

JF - Nanotechnology

IS - 4

M1 - 045601

ER -

Tailoring of morphology and emission wavelength of AlGaInAs quantum dots

Abstract

Keywords

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